• Frontiers of Optoelectronics
  • Vol. 1, Issue 1, 123 (2008)
Shiyuan LIU*, Xiaojian WU, and Xinyi QIN
Author Affiliations
  • State Key Laboratory of Digital Manufacturing Equipment and Technology, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
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    DOI: 10.1007/s12200-008-0015-3 Cite this Article
    Shiyuan LIU, Xiaojian WU, Xinyi QIN. A real-time exposure dose control algorithm for DUV excimer lasers[J]. Frontiers of Optoelectronics, 2008, 1(1): 123 Copy Citation Text show less

    Abstract

    A real-time exposure dose control algorithm for deep ultraviolet (DUV) excimer lasers in a step-andscan optical lithography is presented. By establishing an abstract scan exposure model and analyzing the pulse-topulse energy fluctuation characteristics of DUV excimer lasers, a real-time dose regulation is implemented based on closed-loop feedback control, which especially focuses on reducing the effect of pulse energy overshot and pulseto-pulse stochastic fluctuation. The experiment conducted on an ArF excimer laser with wavelength of 193 nm, repetition rate of 4 kHz, and pulse energy of 5 mJ confirms that such a real-time dose control algorithm is able to achieve a dose accuracy of above 0.89% even with only 20 pulses. It is fully expected that this algorithm will not only meet increasingly stringent dose accuracy requirements for sub-half-micron lithography, but also be helpful to improve lithography throughput as well as efficiency.
    Shiyuan LIU, Xiaojian WU, Xinyi QIN. A real-time exposure dose control algorithm for DUV excimer lasers[J]. Frontiers of Optoelectronics, 2008, 1(1): 123
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