• Chinese Physics B
  • Vol. 29, Issue 9, (2020)
Jingjing Niu1、2, Wenjie Zhang1、2, Zhilin Li1、2, Sixian Yang3, Dayu Yan4, Shulin Chen5, Zhepeng Zhang6, Yanfeng Zhang6, Xinguo Ren3, Peng Gao2、5、7, Youguo Shi4, Dapeng Yu1、2、8, and Xiaosong Wu1、2、8、†
Author Affiliations
  • 1State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Beijing Key Laboratory of Quantum Devices, Peking University, Beijing 0087, China
  • 2Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
  • 3CAS Key Laboratory of Quantum Information, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 20026, China
  • 4Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 5Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
  • 6Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
  • 7International Center for Quantum Materials, School of Physics, Peking University, Beijing 10081, China
  • 8Department of Physics, Southern University of Science and Technology of China, Shenzhen 51055, China
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    DOI: 10.1088/1674-1056/abab85 Cite this Article
    Jingjing Niu, Wenjie Zhang, Zhilin Li, Sixian Yang, Dayu Yan, Shulin Chen, Zhepeng Zhang, Yanfeng Zhang, Xinguo Ren, Peng Gao, Youguo Shi, Dapeng Yu, Xiaosong Wu. Intercalation of van der Waals layered materials: A route towards engineering of electron correlation[J]. Chinese Physics B, 2020, 29(9): Copy Citation Text show less
    HAADF-STEM images taken from different regions of a V5S8 single crystal. (a)–(c) HAADF-STEM images with different sizes. (d) Color-coded STEM image reveals clearly the VI rectangular configuration (the brightest yellow dots).
    Fig. 1. HAADF-STEM images taken from different regions of a V5S8 single crystal. (a)–(c) HAADF-STEM images with different sizes. (d) Color-coded STEM image reveals clearly the VI rectangular configuration (the brightest yellow dots).
    Structural and magnetic properties of V5S8 bulk single crystal. (a) HAADF-STEM image. Lower inset, a zoom-in image with the in-plane atomic model. Upper inset, a reduced FFT image. (b) The magnetic unit cell with the VIS6 octahedron. The blue arrows indicate the direction of the magnetic moments on VI sites. (c) The molar magnetic susceptibility χ for B⊥ ( B⊥ ab plane) and B∥ (B ∥ ab plane). The inset shows the low temperature (T = 2 K) isothermal magnetization curves. (d) The inverse magnetic susceptibility 1/(χ – χ0) for B⊥. The blue dashed line is a linear fit of the Curie–Weiss law, which gives θ = 8.8 K, χ0 = 0.01 cm3 ⋅ mol−1, and μeff = 2.43μB per VI.
    Fig. 1. Structural and magnetic properties of V5S8 bulk single crystal. (a) HAADF-STEM image. Lower inset, a zoom-in image with the in-plane atomic model. Upper inset, a reduced FFT image. (b) The magnetic unit cell with the VIS6 octahedron. The blue arrows indicate the direction of the magnetic moments on VI sites. (c) The molar magnetic susceptibility χ for B ( Bab plane) and B (Bab plane). The inset shows the low temperature (T = 2 K) isothermal magnetization curves. (d) The inverse magnetic susceptibility 1/(χχ0) for B. The blue dashed line is a linear fit of the Curie–Weiss law, which gives θ = 8.8 K, χ0 = 0.01 cm3 ⋅ mol−1, and μeff = 2.43μB per VI.
    Calculated total (black lines) and species-projected density of states (V: red lines; S: blue lines) of V5S8 bulk. The dash line at the 0 eV represents the Fermi level.
    Fig. 1. Calculated total (black lines) and species-projected density of states (V: red lines; S: blue lines) of V5S8 bulk. The dash line at the 0 eV represents the Fermi level.
    The atom-projected density of states (PDOS) of VI (solid red curve), VII (dashed blue curve), and VIII (dot-dashed green curve) in V5S8 bulk.
    Fig. 2. The atom-projected density of states (PDOS) of VI (solid red curve), VII (dashed blue curve), and VIII (dot-dashed green curve) in V5S8 bulk.
    Specific heat C of a 3.5 mg VSe2 single crystal. VSe2 displays no magnetic transition. At low temperatures, C/T is linearly dependent of T2. A linear fit yields a Sommerfeld coefficient γ ∼ 11.5 mJ⋅K−2 per mole of VSe2 formula, shown in the inset.
    Fig. 2. Specific heat C of a 3.5 mg VSe2 single crystal. VSe2 displays no magnetic transition. At low temperatures, C/T is linearly dependent of T2. A linear fit yields a Sommerfeld coefficient γ ∼ 11.5 mJ⋅K−2 per mole of VSe2 formula, shown in the inset.
    Specific heat. (a) The specific heat C as a function of temperature. The inset shows a C/T versus T2 plot. The solid line is a linear fit, which yields γ = 74 mJ⋅K−2⋅mol−1. (b) The low-T specific heat. Ce (dashed line) is the linear term γ T deduced from (a); the lattice contribution (dotted line), Cla = β T3, is inferred from the Debye model fitting; the magnetic term Cmag (dash-dot line) is extracted by the fitting to Eq. (1). The sum of all three contributions, that is, the fitting curve using Eq. (1) (the solid line) is in good agreement with the experimental data (red circles). (c) The non-lattice part of specific heat Δ C for three types of samples with different TN. The dashed lines are the fits using Eq. (1) without β T3. The inset shows the fitting parameters as a function of TN. (d) The relationship between the discontinuity of specific heat at TN(δ C) and TK/TN.
    Fig. 2. Specific heat. (a) The specific heat C as a function of temperature. The inset shows a C/T versus T2 plot. The solid line is a linear fit, which yields γ = 74 mJ⋅K−2⋅mol−1. (b) The low-T specific heat. Ce (dashed line) is the linear term γ T deduced from (a); the lattice contribution (dotted line), Cla = β T3, is inferred from the Debye model fitting; the magnetic term Cmag (dash-dot line) is extracted by the fitting to Eq. (1). The sum of all three contributions, that is, the fitting curve using Eq. (1) (the solid line) is in good agreement with the experimental data (red circles). (c) The non-lattice part of specific heat Δ C for three types of samples with different TN. The dashed lines are the fits using Eq. (1) without β T3. The inset shows the fitting parameters as a function of TN. (d) The relationship between the discontinuity of specific heat at TN(δ C) and TK/TN.
    Temperature dependence of resistivity. (a) The temperature-dependent resistivity of three samples. The inset illustrates the high-T resistivity after subtracting the non-magnetic ρ of VSe2 from that of V5S8. The dotted lines are the –ln T fits. (b) Fits of the low-T (T ρ/ρ(T = 50 K) for the three samples in (a). The dashed lines indicate the fits using Eq. (4), the fitting results are shown in the lower right. The A and Δ are in units of μΩ⋅cm⋅K−2 and K, respectively. (c) Temperature dependent resistivity at different fields. (d), (e) The low-T resistivity ρ/ρ(T = 50 K) for sample A1 at different magnetic fields (B ⊥ ab plane). Dot-dashed lines are fits to Eq. (4). (e) The fitted gap of sample A1 as a function of field. The curves in (b)–(d) are vertically shifted for clarity.
    Fig. 3. Temperature dependence of resistivity. (a) The temperature-dependent resistivity of three samples. The inset illustrates the high-T resistivity after subtracting the non-magnetic ρ of VSe2 from that of V5S8. The dotted lines are the –ln T fits. (b) Fits of the low-T (T < 10 K) resistivity ρ/ρ(T = 50 K) for the three samples in (a). The dashed lines indicate the fits using Eq. (4), the fitting results are shown in the lower right. The A and Δ are in units of μΩ⋅cm⋅K−2 and K, respectively. (c) Temperature dependent resistivity at different fields. (d), (e) The low-T resistivity ρ/ρ(T = 50 K) for sample A1 at different magnetic fields (Bab plane). Dot-dashed lines are fits to Eq. (4). (e) The fitted gap of sample A1 as a function of field. The curves in (b)–(d) are vertically shifted for clarity.
    (a) Comparison of the temperature dependent resistivity ρ(T) between V5S8 and VSe2. ρ versus T. VSe2 displays a linear-T dependence, except for an anomaly at ∼ 90 K, which is due to a charge density wave transition. The dotted line is the baseline subtracted from the resistivity of V5S8 so as to highlight the contribution of the intercalation, Δ ρ. (b) Δ ρ as a function of temperature.
    Fig. 3. (a) Comparison of the temperature dependent resistivity ρ(T) between V5S8 and VSe2. ρ versus T. VSe2 displays a linear-T dependence, except for an anomaly at ∼ 90 K, which is due to a charge density wave transition. The dotted line is the baseline subtracted from the resistivity of V5S8 so as to highlight the contribution of the intercalation, Δ ρ. (b) Δ ρ as a function of temperature.
    Scaling of magnetoresistance for sample A1. (a) Magnetoresistance MR at various temperatures. The curves are vertically shifted for clarity. (b) Normalized resistivity versus B/(T + T*), where T* is a scaling parameter.
    Fig. 4. Scaling of magnetoresistance for sample A1. (a) Magnetoresistance MR at various temperatures. The curves are vertically shifted for clarity. (b) Normalized resistivity versus B/(T + T*), where T* is a scaling parameter.
    Anomalous Hall effect and the carrier density of V5S8. (a) Hall resistivity ρxy (vertically shifted for clarity) at different temperatures. (b) Linear relation between the Hall coefficient RH and the magnetic susceptibility χ above TN. The blue line is a linear fit.
    Fig. 4. Anomalous Hall effect and the carrier density of V5S8. (a) Hall resistivity ρxy (vertically shifted for clarity) at different temperatures. (b) Linear relation between the Hall coefficient RH and the magnetic susceptibility χ above TN. The blue line is a linear fit.
    Temperature-dependent thermopower S. S changes its sign at about 140 K and displays a negative minimum at 60 K.
    Fig. 5. Temperature-dependent thermopower S. S changes its sign at about 140 K and displays a negative minimum at 60 K.
    Jingjing Niu, Wenjie Zhang, Zhilin Li, Sixian Yang, Dayu Yan, Shulin Chen, Zhepeng Zhang, Yanfeng Zhang, Xinguo Ren, Peng Gao, Youguo Shi, Dapeng Yu, Xiaosong Wu. Intercalation of van der Waals layered materials: A route towards engineering of electron correlation[J]. Chinese Physics B, 2020, 29(9):
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