[1] Goel S 2014 The current understanding on the diamond machining of silicon carbide J. Phys. D: Appl. Phys. 47 243001
[2] Perrone D 2007 Process and characterisation techniques on 4H-silicon carbide PhD Thesis Politecnico di Torino (https://www.researchgate.net/publication/238781248_ Process_and_characterisation_techniques_on_4H_- _Silicon_Carbide)
[3] Lohrmann A, Johnson B C, McCallum J C and Castelletto S 2017 A review on single photon sources in silicon carbide Rep. Prog. Phys. 80 034502
[4] Zhou Y, Pan G S, Shi X L, Gong H, Luo G H and Gu Z H 2014 Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry Surf. Coat. Technol. 251 48–55
[5] Demenet J L, Amer M, Tromas C, Eyidi D and Rabier J 2013 Dislocations in 4H- and 3C-SiC single crystals in the brittle regime Phys. Status Solidi c 10 64–7
[6] Ravindra D and Patten J A 2011 Ductile regime material removal of silicon carbide (SiC) Silicon Carbide: New Materials, Production Methods and Application (New York: Nova) pp 141–67
[7] Goel S, Yan J W, Luo X C and Agrawal A 2014 Incipient plasticity in 4H-SiC during quasistatic nanoindentation J. Mech. Behav. Biomed. Mater. 34 330–7
[8] Li Z P, Zhang F H and Luo X C 2018 Subsurface damages beneath fracture pits of reaction-bonded silicon carbide after ultra-precision grinding Appl. Surf. Sci. 448 341–50
[9] Grim J R, Benamara M, Skowronski M, Everson W J and Heydemann V D 2006 Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers Semicond. Sci. Technol. 21 1709
[10] Meng B B, Zhang Y and Zhang F H 2016 Material removal mechanism of 6H-SiC studied by nano-scratching with Berkovich indenter Appl. Phys. A 122 247
[11] Zhang B and Tokura H 1988 Yoshikawa. Study on surface cracking of alumina scratched by single-point diamonds J. Mater. Sci. 23 3214–24
[12] Noreyan A and Amar J G 2008 Molecular dynamics simulations of nanoscratching of 3C SiC Wear 265 956–62
[13] Sun S, Peng X H, Xiang H G, Huang C, Yang B, Gao F S and Fu T 2017 Molecular dynamics simulation in single crystal 3C-SiC under nanoindentation: formation of prismatic loops Ceram. Int. 43 16313–8
[14] Meng B B, Yuan D D and Xu S L 2019 Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale Ceram. Int. 45 2483–91
[15] Liu Y, Li B Z and Kong L F 2018 Molecular dynamics simulation of silicon carbide nanoscale material removal behaviour Ceram. Int. 44 11910–3
[16] Wu Z H, Liu W D and Zhang L C 2017 Revealing the deformation mechanisms of 6H-silicon carbide under Nano-cutting Comput. Mater. Sci. 137 282–8
[17] Wu Z H, Liu W D, Zhang L C and Lim S 2020 Amorphization and dislocation evolution mechanisms of single crystalline 6H-SiC Acta Mater. 182 60–7
[18] Luo X C, Goel S and Reuben R L 2012 A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide J. Eur. Ceram. Soc. 32 3423–34
[19] Meng B B, Yuan D D and Xu S L 2019 Atomic-scale characterization of slip deformation and nanometric machinability of single-crystal 6H-SiC Nanoscale Res. Lett. 14 309
[20] Meng B B, Yuan D D, Zheng J and Xu S L 2019 Molecular dynamics study on femtosecond laser aided machining of monocrystalline silicon carbide Mater. Sci. Semicond. Process. 101 1–9
[21] Kang C Y, Tang J, Li L M, Pan H B, Xu P S, Wei S Q, Chen X F and Xu X G 2012 In situ study on the electronic structure of graphene grown on 6H-SiCwith synchrotron radiation photoelectron spectroscopy Appl. Surf. Sci. 258 2187–91
[22] Hu Y F, Zhang Y M, Guo H, Chong L Y and Zhang Y M 2016 Preparation of few-layer graphene on on-axis 4H-SiCsubstrates using a modified SiC-stacked method Mater. Lett. 164 655–8
[23] Pan G S, Zhou Y, Luo G H, Shi X L, Zou C L and Gong H 2013 Chemical mechanical polishing (CMP) of on-axis Si-face 6H-SiC wafer for obtaining atomically flat defect-free surface J. Mater. Sci., Mater. Electron. 24 5040–7
[24] Chen G M, Ni Z F, Xu L J, Li Q Z and Zhao Y W 2015 Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates Appl. Surf. Sci. 359 664–8
[25] Kim H M, Oh J E and Kang T W 2001 Preparation of large area free-standing GaN substrates by HVPE using mechanical polishing liftoff method Mater. Lett. 47 276–80
[26] Shi X L, Pan G S, Zhou Y, Gu Z H, Gong H and Zou C L 2014 Characterization of colloidal silica abrasives with different sizes and their chemical–mechanical polishing performance on 4H-SiC (0001) Appl. Surf. Sci. 307 414–27
[27] Kubota A, Yoshimura M, Fukuyama S, Iwamoto C and Touge M 2012 Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution Precis. Eng. 36 137–40
[28] Tian Z G, Xu X P, Jiang F, Lu J, Luo Q F and Lin J M 2019 Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations Ceram. Int. 45 21998–2006
[29] Chen X F, Xu X G, Hu X B, Li J, Jiang S Z, Ning L N, Wang Y M and Jiang M H 2007 Anisotropy of chemical mechanical polishing in silicon carbide substrates Mater. Sci. Eng. B 142 28–30
[30] Lu J, Luo Q F, Xu X P, Huang H and Jiang F 2019 Removal mechanism of 4H-and 6H-SiC substrates (0001 and) in mechanical planarization machining Proc. Inst. Mech. Eng. B 233 69–76
[31] Luo Q 2018 Research on Abrasive Polishing Removal Mechanisms of LED Substrates Materials (Xiamen: Huaqiao University)
[32] Pan Z J, Feng B, Wang L and Hao J M 2013 Comparative chemical mechanical polishing studies of SiC (0001) and SiC (000-1) surface Equip. Electron. Prod. Manuf. 42 19–23
[33] Goel S, Luo X C, Reuben R L and Rashid W B 2011 Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting Nanoscale Res. Lett. 6 589
[34] Zhang L C and Tanaka H 1999 On the mechanics and physics in the Nano-indentation of silicon monocrystals JSME Int. J. A 42 546–59
[35] Goel S, Luo X C, Agrawal A and Reuben R L 2015 Diamond machining of silicon: a review of advances in molecular dynamics simulation Int. J. Mach. Tools Manuf. 88 131–64
[36] Oluwajobi A and Chen X 2011 The effect of interatomic potentials on the molecular dynamics simulation of nanometric machining Int. J. Autom. Comput. 8 326–32
[37] Oluwajobi A O and Chen X 2013 Effects of interatomic potentials on the determination of the minimum depth of cut in nanomachining Int. J. Abras. Technol. 6 16–39
[38] Tersoff J 1989 Modeling solid-state chemistry: interatomic potentials for multicomponent systems Phys. Rev. B 39 5566–8
[39] Plimpton S 1995 Fast parallel algorithms for short-range molecular dynamics J. Comput. Phys. 117 1–19
[40] Stukowski A 2010 Visualization and analysis of atomistic simulation data with OVITO-the Open Visualization Tool Modell. Simul. Mater. Sci. Eng. 18 015012
[41] Stukowski A, Bulatov V V and Arsenlis A 2012 Automated identification and indexing of dislocations in crystal interfaces Modell. Simul. Mater. Sci. Eng. 20 085007
[42] Rowe W B and Chen X 1997 Characterization of the size effect in grinding and the sliced bread analogy Int. J. Prod. Res. 35 887–99
[43] Heinzel C and Bleil N 2007 The use of the size effect in grinding for work-hardening CIRP Ann. 56 327–30
[44] Honeycutt J D and Andersen H C 1987 Molecular dynamics study of melting and freezing of small Lennard-Jones clusters J. Phys. Chem. 91 4950–63
[45] Maras E, Trushin O, Stukowski A, Ala-Nissila T and J′onsson H 2016 Global transition path search for dislocation formation in Ge on Si(001) Comput. Phys. Commun. 205 13–21
[46] Yin L, Vancoille E Y J, Ramesh K and Huang H 2004 Surface characterization of 6H-SiC (0001) substrates in indentation and abrasive machining Int. J. Mach. Tools Manuf. 44 607–15