Fig. 1. Schematics of reflection-type EIT metasurface structure. (a) Three-dimensional view; (b) front view

Fig. 2. Simulated reflection spectra of reflection-type EIT metasurface. (a) Reflection spectrum of inner split ring; (b) reflection spectrum of closed outer ring; (c) reflection only spectrum of double rings

Fig. 3. Effect of photosensitive silicon conductivity on reflection performance. (a) Reflectivity of 2.75-2.93THz reflection transparent window with different photosensitive silicon conductivity; (b) reflectivity at 3.66-4.1THz reflection transparent window with different photosensitive silicon conductivity

Fig. 4. Electric field distributions of EIT metasurface structure at frequencies in transparency windows. (a) Electric field distribution of top surface of metal at 2.81THz; (b) electric field distribution of bottom metal plane at 3.82THz

Fig. 5. Current distributions of EIT metasurface at 3.82THz for different conductivity of photosensitive silicon. (a) Conductivity of 1S/m; (b) conductivity of 250S/m; (c) conductivity of 500S/m