• Chinese Journal of Lasers
  • Vol. 30, Issue 5, 435 (2003)
[in Chinese]1、2、*, [in Chinese]2, [in Chinese]3, [in Chinese]4, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Numerical Simulation Study on Field of NdNd3+ Concentration during the Growth of Nd∶YAG Crystal[J]. Chinese Journal of Lasers, 2003, 30(5): 435 Copy Citation Text show less
    References

    [2] X. Geng, X. B. Wu, Z. Y. Guo. Numerical simulation of combined flow in Czochralski crystal growth [J]. Journal of Crystal Growth, 1997, 179(1-2):309~319

    [3] C. Shu, Y. T. Chew, Y. Liu. An efficient approach for numerical simulation of flows in Czochralski crystal growth [J]. Journal of Crystal Growth, 1997, 181(4):427~436

    [4] Koichi Kakimoto, Hiroyuki Ozoe. Heat and mass transfer during crystal growth [J]. Computer Materials Science, 1998, 10:127~133

    [5] W. E. Langlois. Digital simulation of Czochralski bulk flow in a parameter range appropriate for liquid semiconductors [J]. Journal of Crystal Growth, 1977, 42:386~399

    [6] Yasunori Okano, Tsuguo Fukuda. Numerical study on Czochralski growth of oxide single crystals [J]. Journal of Crystal Growth, 1991, 109:94~98

    [7] George H. Gilmer. Computer simulation of crystal growth [J]. Journal of Crystal Growth, 1977, 42:3~10

    [9] Min Naiben. The Physical Foundation of Crystal Growth [M]. Shanghai: Shanghai Press of Science and Technology, 1982, Chapter 3. 80~133 (in Chinese)

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Numerical Simulation Study on Field of NdNd3+ Concentration during the Growth of Nd∶YAG Crystal[J]. Chinese Journal of Lasers, 2003, 30(5): 435
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