• Chinese Optics Letters
  • Vol. 16, Issue 2, 020004 (2018)
Bo Guo*
Author Affiliations
  • Key Laboratory of In-Fiber Integrated Optics, Ministry of Education, Harbin Engineering University, Harbin 150001, China
  • show less
    DOI: 10.3788/COL201816.020004 Cite this Article Set citation alerts
    Bo Guo. 2D noncarbon materials-based nonlinear optical devices for ultrafast photonics [Invited][J]. Chinese Optics Letters, 2018, 16(2): 020004 Copy Citation Text show less
    (a) Schematic illustration of different kinds of typical 2D materials, such as graphene, h-BN, TMDs, MOFs, COFs, MXenes, LDHs, oxides, metals, and BP. Selected from Ref. [7]. (b) Summary of stability analysis and semiconducting properties of 44 different MX2 compounds. Transition metal atoms indicated by M are divided into 3d, 4d, and 5d groups. MX2 compounds shaded light gray form neither stable H (2H-MX2) nor T (1T-MX2) structure. In each box, the lower-lying structure (H or T) is the ground state. The resulting structures (T or H) can be half-metallic (+), metallic (*), or semiconducting (**) with direct or indirect band gaps. Selected from Ref. [21].
    Fig. 1. (a) Schematic illustration of different kinds of typical 2D materials, such as graphene, h-BN, TMDs, MOFs, COFs, MXenes, LDHs, oxides, metals, and BP. Selected from Ref. [7]. (b) Summary of stability analysis and semiconducting properties of 44 different MX2 compounds. Transition metal atoms indicated by M are divided into 3d, 4d, and 5d groups. MX2 compounds shaded light gray form neither stable H (2H-MX2) nor T (1T-MX2) structure. In each box, the lower-lying structure (H or T) is the ground state. The resulting structures (T or H) can be half-metallic (+), metallic (*), or semiconducting (**) with direct or indirect band gaps. Selected from Ref. [21].
    Schematic of fabrication techniques of 2D materials. Selected from Ref. [45].
    Fig. 2. Schematic of fabrication techniques of 2D materials. Selected from Ref. [45].
    Liquid exfoliation of layered crystals allows the production of suspensions of 2D nanosheets, which can be formed into a range of structures. (a) MoS2 powder. (b) WS2 dispersed in surfactant solution. (c) An exfoliated MoS2 nanosheet. (d) A hybrid material consisting of WS2 nanosheets embedded in a network of carbon nanotubes. Selected from Ref. [46].
    Fig. 3. Liquid exfoliation of layered crystals allows the production of suspensions of 2D nanosheets, which can be formed into a range of structures. (a) MoS2 powder. (b) WS2 dispersed in surfactant solution. (c) An exfoliated MoS2 nanosheet. (d) A hybrid material consisting of WS2 nanosheets embedded in a network of carbon nanotubes. Selected from Ref. [46].
    Schematic of the Z-scan experimental setup.
    Fig. 4. Schematic of the Z-scan experimental setup.
    Schematic of (a) optical and (b) microwave saturable absorption in TI:Bi2Te3. Selected from Ref. [49].
    Fig. 5. Schematic of (a) optical and (b) microwave saturable absorption in TI:Bi2Te3. Selected from Ref. [49].
    Various integration methods of 2D materials for fiber devices: (a) Sandwiched device; (b) in-fiber microfluidic channels; (c) photonic-crystal fibers; (d) D-shaped and (e) tapered fibers. (f) Fully integrated monolithic fiber laser. The SAs represented in this figure could be 2D materials-based SAs. Selected from Ref. [34].
    Fig. 6. Various integration methods of 2D materials for fiber devices: (a) Sandwiched device; (b) in-fiber microfluidic channels; (c) photonic-crystal fibers; (d) D-shaped and (e) tapered fibers. (f) Fully integrated monolithic fiber laser. The SAs represented in this figure could be 2D materials-based SAs. Selected from Ref. [34].
    Experimental setup.
    Fig. 7. Experimental setup.
    Material characterization: (a) Transverse electromagnetic (TEM) image and (b) X-ray diffraction (XRD) patterns of Bi2Se3. Q-switching characteristics of an EDFL based on Bi2Se3 SA: (c) Optical spectrum and (d) the pulse duration and peak power as a function of the pump power. Selected from Ref. [200].
    Fig. 8. Material characterization: (a) Transverse electromagnetic (TEM) image and (b) X-ray diffraction (XRD) patterns of Bi2Se3. Q-switching characteristics of an EDFL based on Bi2Se3 SA: (c) Optical spectrum and (d) the pulse duration and peak power as a function of the pump power. Selected from Ref. [200].
    Device characterization: (a) Linear absorption spectra of Bi2Te3 SA. Tunable mode-locking characteristics of an EDFL based on Bi2Te3 SA: (b) Output soliton spectrum, (c) its corresponding autocorrelation trace, (d) tunable wavelength spectra. Selected from Ref. [250].
    Fig. 9. Device characterization: (a) Linear absorption spectra of Bi2Te3 SA. Tunable mode-locking characteristics of an EDFL based on Bi2Te3 SA: (b) Output soliton spectrum, (c) its corresponding autocorrelation trace, (d) tunable wavelength spectra. Selected from Ref. [250].
    Device characterization: (a) Scanning electron microscoped (SEM) image of the microfiber-based WS2 SA. Harmonic mode-locking characteristics of an EDFL based on WS2 SA: (b) Output optical spectrum, (c) measured pulse duration, and (d) the radio frequency (RF) spectrum in full range with a 10 kHz resolution bandwidth (RBW). Selected from Ref. [291].
    Fig. 10. Device characterization: (a) Scanning electron microscoped (SEM) image of the microfiber-based WS2 SA. Harmonic mode-locking characteristics of an EDFL based on WS2 SA: (b) Output optical spectrum, (c) measured pulse duration, and (d) the radio frequency (RF) spectrum in full range with a 10 kHz resolution bandwidth (RBW). Selected from Ref. [291].
    Material and device characterization: (a) Atomic force microscope (AFM) image of WS2 nanosheets; (b) nonlinear transmission of WS2 SA at 1550 nm. Dissipative soliton characteristics of an EDFL based on WS2 SA: (c) Output optical spectrum, (d) its corresponding autocorrelation trace. Selected from Ref. [341].
    Fig. 11. Material and device characterization: (a) Atomic force microscope (AFM) image of WS2 nanosheets; (b) nonlinear transmission of WS2 SA at 1550 nm. Dissipative soliton characteristics of an EDFL based on WS2 SA: (c) Output optical spectrum, (d) its corresponding autocorrelation trace. Selected from Ref. [341].
    Device characterization: (a) SEM image of the fiber connector end facet with marked fiber cladding and core with visible BP layer covering the core. Mode-locking characteristics of an EDFL at 2 μm based on BP SA: (b) Optical spectrum of the laser (red line) together with the water absorption lines taken from the high-resolution transmission (HITRAN) database (blue line). Inset: spectrum measured in wide 60 nm span. (c) Autocorrelation trace and (d) RF spectrum. Selected from Ref. [363].
    Fig. 12. Device characterization: (a) SEM image of the fiber connector end facet with marked fiber cladding and core with visible BP layer covering the core. Mode-locking characteristics of an EDFL at 2 μm based on BP SA: (b) Optical spectrum of the laser (red line) together with the water absorption lines taken from the high-resolution transmission (HITRAN) database (blue line). Inset: spectrum measured in wide 60 nm span. (c) Autocorrelation trace and (d) RF spectrum. Selected from Ref. [363].
    Experimental setup: (a) Schematic of the mode-locked Er:ZBLAN fiber laser based on BP SAM; DM, dichroic mirror; ROC, radius of curvature. (b) Saturable absorption curve and its measurement setup. Mode-locking characteristics of an EDFL at 3 μm: (c) Autocorrelation trace; (d) the optical spectrum. Selected from Ref. [366].
    Fig. 13. Experimental setup: (a) Schematic of the mode-locked Er:ZBLAN fiber laser based on BP SAM; DM, dichroic mirror; ROC, radius of curvature. (b) Saturable absorption curve and its measurement setup. Mode-locking characteristics of an EDFL at 3 μm: (c) Autocorrelation trace; (d) the optical spectrum. Selected from Ref. [366].
    Material characterization: (a) Raman spectrum of few-layer WS2 (inset: the photograph of the solution sample). Dual-wavelength soliton characteristics of an EDFL based on WS2 SA: (b) Optical spectrum, (c) the oscilloscope trace (inset: the autocorrelation trace), and (d) long-term optical spectra of dual-wavelength soliton operation. Selected from Ref. [381].
    Fig. 14. Material characterization: (a) Raman spectrum of few-layer WS2 (inset: the photograph of the solution sample). Dual-wavelength soliton characteristics of an EDFL based on WS2 SA: (b) Optical spectrum, (c) the oscilloscope trace (inset: the autocorrelation trace), and (d) long-term optical spectra of dual-wavelength soliton operation. Selected from Ref. [381].
    Experimnetal setup: (a) Schematic of the mode-locked solid laser based on BP SAM, M1 is an input mirror, dichroic mirror coated for high transmission at the pump wavelength and high reflection in 1020–1100 nm range. Mode-locking characteristics of an EDFL: (b) The autocorrelation trace (inset: the optical spectrum). Selected from Ref. [457].
    Fig. 15. Experimnetal setup: (a) Schematic of the mode-locked solid laser based on BP SAM, M1 is an input mirror, dichroic mirror coated for high transmission at the pump wavelength and high reflection in 1020–1100 nm range. Mode-locking characteristics of an EDFL: (b) The autocorrelation trace (inset: the optical spectrum). Selected from Ref. [457].
    Experimental setup: (a) Schematic image of a monolayer WS2 microdisk laser. Output characteristics: (b) Photoluminescence spectrum, the brown line is a fit to the background emission, and the green line is a fit to the WS2 cavity emission. Selected from Ref. [494].
    Fig. 16. Experimental setup: (a) Schematic image of a monolayer WS2 microdisk laser. Output characteristics: (b) Photoluminescence spectrum, the brown line is a fit to the background emission, and the green line is a fit to the WS2 cavity emission. Selected from Ref. [494].
    Experimnetal setup: (a) Output testing of the Q-switched waveguide laser based on few-layer Bi2Se3 SA. Q-switching characteristics of waveguide laser: (b) The output power as a function of the pump power (inset: the optical spectrum). Selected from Ref. [506].
    Fig. 17. Experimnetal setup: (a) Output testing of the Q-switched waveguide laser based on few-layer Bi2Se3 SA. Q-switching characteristics of waveguide laser: (b) The output power as a function of the pump power (inset: the optical spectrum). Selected from Ref. [506].
    Material and device characterization: (a) Schematic of a graphene-Bi2Te3 heterostructure on the end-facet of the fiber connector. Mode-locking characteristics of an EDFL based on a graphene-Bi2Te3 heterostructure SA: (b) Optical spectrum, (c) autocorrelation trace, and (d) RF spectrum (inset: wideband RF spectrum). Selected from Ref. [519].
    Fig. 18. Material and device characterization: (a) Schematic of a graphene-Bi2Te3 heterostructure on the end-facet of the fiber connector. Mode-locking characteristics of an EDFL based on a graphene-Bi2Te3 heterostructure SA: (b) Optical spectrum, (c) autocorrelation trace, and (d) RF spectrum (inset: wideband RF spectrum). Selected from Ref. [519].
    Material characterization: (a) High-resolution TEM (HRTEM) image and (b) Raman spectra of phosphorene QDs (PQDs). Mode-locking characteristics of an EDFL based on a PQDs SA: (c) Optical spectrum and (d) autocorrelation trace. Selected from Ref. [527].
    Fig. 19. Material characterization: (a) High-resolution TEM (HRTEM) image and (b) Raman spectra of phosphorene QDs (PQDs). Mode-locking characteristics of an EDFL based on a PQDs SA: (c) Optical spectrum and (d) autocorrelation trace. Selected from Ref. [527].
    Evolution of chaotic multi-pulse bunch over several cavity round-trips in a mode-locked EDFL based on the Bi2Se3 SA. Inset: Microscopy image of the TI-deposited microfiber. Selected from Ref. [563].
    Fig. 20. Evolution of chaotic multi-pulse bunch over several cavity round-trips in a mode-locked EDFL based on the Bi2Se3 SA. Inset: Microscopy image of the TI-deposited microfiber. Selected from Ref. [563].
    Material characterization: (a) The photograph of few-layer WS2; (b) the optical spectrum of the second-order form of the dual-peak–dip sidebands generated from a mode-locked EDFL based on a WS2 SA. Selected from Ref. [573].
    Fig. 21. Material characterization: (a) The photograph of few-layer WS2; (b) the optical spectrum of the second-order form of the dual-peak–dip sidebands generated from a mode-locked EDFL based on a WS2 SA. Selected from Ref. [573].
    Material characterization: (a) Microscope image and the evanescent field of microfiber-based Bi2Te3 SA observed using visible light and (b) the XRD pattern. Mode-locking characteristics of an EDFL based on a Bi2Te3 SA: (c) Pulse traces and (d) corresponding optical spectra of harmonic mode-locked vector dark pulses. Selected from Ref. [566].
    Fig. 22. Material characterization: (a) Microscope image and the evanescent field of microfiber-based Bi2Te3 SA observed using visible light and (b) the XRD pattern. Mode-locking characteristics of an EDFL based on a Bi2Te3 SA: (c) Pulse traces and (d) corresponding optical spectra of harmonic mode-locked vector dark pulses. Selected from Ref. [566].
    2D MaterialsEnergy Gap (eV)Source Laser ParametersNonlinear ProcessNonlinear Refractive Index (cm2·W1)Third-order Nonlinear Susceptibility (esu)References
    Graphene01550 nm, 10 MHz, 3.8 psSA1071.33×1010[38]
    Bi2Se30.3800 nm, 1 kHz, 100 fsSA2.26×1010--[48]
    Bi2Te30.061562 nm, 21 MHz, 1.5 psSA8.6×109107[49]
    Sb2Te3SA[53]
    MoS21.87488 nm, CWSA(9.32±0.3)×107(3±0.1)×109[55]
    WS21.98488 nm, CWSA(6.09±0.14)×107(5.15±0.12)×109[57]
    MoSe21.62488 nm, CWSA(6.49±0.14)×107(7.75±0.24)×109[61]
    WSe2488 nm, CWSA[65]
    BP0.3–1.5800 nm, 1 kHz, 100 fsSA/TPA(6.5±0.6)×107(1.48±0.15)×109[66]
    h-BN3.6–7.2800 nm, 1 kHz, 100 fs--(0.6812)×109(117)×108[69]
    SiO27.81500 nm--(2.24.5)×1014--[48]
    Table 1. Summary of the Nonlinear Optical Parameters of 2D Materials
    2D MaterialsIncorporation MethodCentral Wavelength (nm)Pulse Duration (μs)Repetition Rate (kHz)Max. Pulse Energy (nJ)References
    Bi2Se3Deposited on fiber end1060Shortest, 1.958.3–29.117.9[197]
    Bi2Se3Deposited on fiber endTunable, 1545.1–1565.113.4–364.5–12.8813.3[198]
    Bi2Se3Deposited on fiber end19804.18–18.58.4–26.8313[199]
    Bi2Se3Deposited on fiber end15304.96.2–40.139.8[200]
    Bi2Se3Polyvinyl alcohol film15651.9–7.76459–94023.8[201]
    Bi2Se3Polyvinyl alcohol film6040.494–0.74886.2–187.43.1[202]
    Bi2Se3Deposited on tapered fiber1562.271.6–17.712.3–52.70.08[203]
    Bi2Te3Deposited on fiber endTunable, 1510.9–1589.113–492.15–12.81525[204]
    Bi2Te3Deposited on fiber end1564.942.9119.20.0042[205]
    Bi2Te3Deposited on side-polished fiber1562.92.81–9.367.5–42.812.7[206]
    Bi2Te3Deposited on side-polished fiber1559.54.88–8.468.74–21.243.8[207]
    Bi2Te3Polyimide film1557.53.71–5.1531.54–49.43.3[208]
    Bi2Te3Saturable absorber mirror2979.91.37–4.8346–81.963.99[209]
    Sb2Te3Saturable absorber mirrorTunable, 1530–15700.498–33818.07[210]
    Sb2Te3Deposited on side-polished fiber15600.93–5.2442–132140[211]
    MoS2Polyvinyl alcohol filmTunable, 1519.6–1567.75–910.6–34.5160[212]
    MoS2Polyvinyl alcohol film1066.55.8–176.4–28.932.6[213]
    15605.4–23.36.5–2763.2
    20301.76–2.533.6–48.11000
    MoS2Polyvinyl alcohol filmTunable, 1030–10702.68–4.465.3–891.1[214]
    MoS2Deposited on fiber end15633.9–5.426.6–40.90.65[215]
    MoS2Saturable absorber mirror1549.830.66–0.76116–131152[216]
    MoS2Deposited on fiber endTunable, 1550–15756–3522150[217]
    MoS2Polyvinyl alcohol film1549.911.66–6.1110.6–173.127.2[218]
    MoS2Polyvinyl alcohol film1560.51.92–3.728.6–114.88.2[219]
    MoS2Polyvinyl alcohol film15603.2–5.136.8–91.70.029[220]
    WS2Polyvinyl alcohol filmTunable, 1027–10651.57–2.1165.28–106.1628.8[221]
    WS2Polyvinyl alcohol film10303.2–6.424.9–36.713.6[222]
    15581.1–3.479–97179.6
    WS2Polyvinyl alcohol film1547.51–3.180–1200.05[223]
    WS2Polyvinyl alcohol film15603.1–7.94.5–49.633.2[224]
    WS2Polyvinyl alcohol film635.10.207232.7–512.80.04[225]
    MoS2635.50.227240.4–438.60.03
    MoSe2635.40.24357.1–555.10.02
    WS2Polyvinyl alcohol film6040.435–1.10167.3–127.96.4[226]
    MoS26020.602–1.95550.8–118.45.5
    WS2Spin-coated on side-polished fiber1567.80.92–2.8282–13419[227]
    WS2Deposited on tapered fiber15300.78–2.3174–25023.5[228]
    WS2Saturable absorber mirror15600.1549–1.26929.5–367.868.5[229]
    MoSe2Polyvinyl alcohol film10602.8–4.660–74.9116[231]
    15664.8–7.926.5–35.4825
    19245.5–1614–21.842
    MoS2Polyvinyl alcohol film15609.92–13.5347.758–41.452184.7[232]
    MoSe24.04–6.50660.724–66.847365.9
    WS23.966–6.70747.026–77.9251179.4
    WSe24.063–9.18246.281–85.365484.8
    WSe2Polyvinyl alcohol film15500.8–1.592–14029[233]
    BPDeposited on fiber end1562.8710.32–39.846.983–15.7894.3[236]
    BPPMMA–BP–PMMA composites1561.92.96–557.86–34.32194[237]
    BPDeposited on fiber end19120.731–1.4269.4–113632.4[238]
    BPPolyvinyl alcohol film635.40.383–1.56108.8–409.827.6[239]
    BPPolyvinyl alcohol filmTunable, 1563.3–1567.81.36–3.3964.51–82.64148.63[240]
    BPDeposited on side-polished fiber1550, tunable, 1832–19359.35–414.43–1828.3[241]
    4.9–5.720–42114
    BPDeposited on tapered fiber1064.72–5.526–7617.8[242]
    BPSaturable absorber mirror24110.189–0.498–176205[243]
    BPSaturable absorber mirror27791.18–2.139–637.7[244]
    Table 2. Performance Summary of Q-switched Fiber Lasers Based on 2D Noncarbon Materials
    2D MaterialsIncorporation MethodCentral Wavelength (nm)Pulse Duration (ps)Repetition Rate (MHz)Output Power (mW)References
    Bi2Se3Saturable absorber mirrorTunable, 1557–15651.571.21--[245]
    Bi2Se3Polyvinyl alcohol film1557.50.6612.51.8[246]
    Bi2Se3Polyvinyl alcohol film15600.728.29--[247]
    Bi2Se3Filled into photonic crystal fiber1554.560.90820.270.8[248]
    Bi2Se3Deposited on fiber end15710.57912.540.265[249]
    Bi2Te3Saturable absorber mirrorTunable, 1554–15641.211.21--[250]
    Bi2Te3Deposited on tapered fiber1558.52.49Harmonic, 2.04 GHz5.02[251]
    Bi2Te3Deposited on tapered fiber1542.3--17.423[252]
    Bi2Te3Deposited on tapered fiber1564.10.92Harmonic, 2.95 GHz45.3[253]
    Bi2Te3Deposited on tapered fiber15641.34232.145.3[254]
    Bi2Te3Deposited on side-polished fiber15470.54315.11--[255]
    Bi2Te3Deposited on side-polished fiber1555.90.63Harmonic, 773.851.4[256]
    Bi2Te3Filled into photonic crystal fiber1065.4575.8Harmonic, 28.73--[257]
    Bi2Te3Filled into photonic crystal fiber1064.470.961.11--[258]
    Bi2Te3Drop-casted membrane1565.90.44817.763.6[259]
    Bi2Te3Polyvinyl alcohol film15571.088.6350.25[260]
    n-Bi2Te3Deposited on fiber end15720.4----[261]
    p-Bi2Te315760.385----
    Sb2Te3Deposited on fiber end1558.61.84.750.5[262]
    Sb2Te3Deposited on fiber end1558.22.2Harmonic, 3044.5[263]
    Sb2Te3Deposited on side-polished fiber15610.2734.51[264]
    Sb2Te3Deposited on side-polished fiber1568.80.19533.079[265]
    Sb2Te3Deposited on side-polished fiber1036.75.319.284[266]
    MoS2Deposited on fiber end1054.38006.589.3[279]
    MoS2Deposited on fiber end1568.91.288.2885.1[280]
    MoS2Deposited on tapered fiber1042.66566.742.37[281]
    MoS2Deposited on tapered fiber15583Harmonic, 2.5 GHz5.39[282]
    MoS2Deposited on side-polished fiber15600.214.533[283]
    MoS2Polyvinyl alcohol film1569.50.7112.091.78[284]
    MoS2Polyvinyl alcohol film1556.30.935Harmonic, 4636[285]
    MoS2Polyvinyl alcohol filmTunable, 1535–15650.9612.99--[286]
    MoS2Polyvinyl alcohol film1567.71.45.78--[287]
    MoS2Polyvinyl alcohol film1598.940.8317.11.26[288]
    G/MoS2Deposited on fiber end1571.82.23.47--[60]
    WS2Polyvinyl alcohol film15720.59525.254[290]
    WS2Deposited on tapered fiber1558.50.67519.580.625[291]
    WS2Deposited on tapered fiber15610.36924.931.93[292]
    WS2Deposited on tapered fiber15650.33231.110.43[293]
    WS2Deposited on tapered fiber15610.246101.418[294]
    WS2+NPEDeposited on tapered fiber15400.067135--[295]
    WS2Deposited on side-polished fiber15571.328.86110[296]
    WS2Filled into side-polished fiber15570.6610.2--[297]
    WS2Filled into photonic crystal fiber1563.80.80819.572.64[298]
    WS2Saturable absorber mirror15601.043525.28[299]
    WS2Saturable absorber mirrorTunable, 1530.5–1570.40.993966[300]
    WS2Large area film1568.31.490.48762.5[301]
    ReS2Polyvinyl alcohol film15581.65.480.4[304]
    MoSe2Polyvinyl alcohol film1558.251.458.0280.4[305]
    MoSe2Deposited on side-polished fiber1557.30.688Harmonic, 3.27 GHz22.8[306]
    SnS2Deposited on side-polished fiber10312823.76--[307]
    15611.634.398--
    BPDeposited on tapered fiberTunable, 1532–15700.944.695.6[313]
    BPDeposited on tapered fiberTunable, 1545–15790.2860.5--[314]
    BPDeposited on fiber end1558.70.78614.7--[315]
    BPDeposited on fiber end1560.50.24228.20.5[316]
    BPDeposited on fiber end1568.19117.6 ns1.6434.43[317]
    BPDeposited on fiber end15620.63512.5--[318]
    BPPolyvinyl alcohol film1085.57.5413.580[319]
    Table 3. Performance Summary of Mode-locked Fiber Lasers Based on 2D Noncarbon Materials
    2D MaterialsIncorporation MethodCentral Wavelength (nm)Pulse Duration (ps)Repetition Rate (MHz)Pulse Energy (nJ)References
    Bi2Se3Bi2Se3-SA film1031.74744.60.756[332]
    Bi2Te3Self-assembly filmTunable, 1548.2–1570.14.510.712.8[333]
    Bi2Te3Deposited on side-polished fiber1560Tunable, 2.7–12.8 ns1.722.4[334]
    Sb2Te3Deposited on side-polished fiber15650.12822.3244.8 pJ[335]
    Sb2Te3Deposited on side-polished fiber15580.16725.380.21[336]
    Sb2Te3Deposited on side-polished fiber1065.35.919.280.81[337]
    MoS2Deposited on side-polished fiber15684.9826.020.08[338]
    MoSe2Polyvinyl alcohol film104047115.440.13[339]
    WS2Polyvinyl alcohol composite1052.450.71323.261.29[340]
    WS2Deposited on side-polished fiber1063.66305.5713.6[341]
    1565.521.18.052.2
    Table 4. Performance Summary of Dissipative Soliton Fiber Lasers Based on 2D Noncarbon Materials
    2D MaterialsIncorporation MethodCentral Wavelength (nm)Pulse Duration (ps)Repetition Rate (MHz)Pulse Energy (nJ)References
    Bi2Te3Deposited on side-polished fiber19350.79527.90.72[358]
    Bi2Te3Deposited on side-polished fiber1909.51.2621.5--[359]
    MoS2Saturable absorber mirror19058439.6715.5[360]
    WS2Deposited on side-polished fiber19411.334.80.0172[361]
    WTe2Deposited on tapered fiber1915.51.2518.722.13[362]
    BPDeposited on fiber end19100.73936.80.0407[363]
    BPDeposited on fiber end201.329.10.379[364]
    941.62900.231
    Bi2Te3Saturable absorber mirror2830610.48.6[365]
    BPSaturable absorber mirror2783422425.5[366]
    BPSaturable absorber mirror2866.78.613.9876.2[367]
    2970.3, Q-switched2.41-5.8 μs12.43-62.5 kHz84.93 μJ
    Cu2xSDeposited on fiber end2769, Q-switched0.75 μs66.4-90.7 kHz2.36 μJ[368]
    Table 5. Performance Summary of Mid-infrared Mode-locked Fiber Lasers Based on 2D Noncarbon Materials
    2D MaterialsIncorporation MethodCentral Wavelength (nm)Pulse Duration (ps)Repetition Rate (MHz)Pulse Energy (nJ)References
    Bi2Se3Polyvinyl alcohol film1567.2/1568/1568.8/1569.2228.831.1[376]
    Bi2Se3Polyvinyl alcohol film1561.6/1562.113.62–25.16 ns3.54 Harmonic, 150.593–2.824[377]
    Bi2Se3Deposited on fiber endTunable, 1527.6–1528.4--8.95--[343]
    1529.2–1530
    1531.4–1532.2
    Bi2Se3Deposited on fiber endTunable, 1547.6–1548.4308.951.12[378]
    1549.2–1550
    1551.4-1552.2
    Bi2Te3Deposited on tapered fiber1559.41.3239, 47th harmonic--[379]
    1557.4388, 76th harmonic
    WS2Deposited on tapered fiber1558.540.6058.831.14[380]
    1565.990.585
    WS2Deposited on tapered fiber1568.55/1569112.146.64[381]
    BPDeposited on fiber end1557.2/1557.7/1558.29.411.65--[383]
    BPDeposited on fiber end1533/1558--20.8--[384]
    BP QDDeposited on tapered fiber1532.02/1556.25--9.45--[385]
    G/SnO2/PANITernary composite film1532/1557.61.252.131.51[386]
    Table 6. Performance Summary of Multiwavelength Mode-locked Fiber Lasers Based on 2D Noncarbon Materials
    2D MaterialsGain MediumCentral Wavelength (nm)Pulse Duration (μs)Repetition Rate (kHz)Pulse Energy (μJ)References
    Bi2Se3Nd:GdVO410630.666–1.3100–5470.0585[413]
    Bi2Se3Nd:Lu2O31077, 10810.7–1.844.3–94.70.8342[414]
    Bi2Se3c-cut Nd:YVO41066.6, 1066.80.25–0.551–1350.56[415]
    Bi2Se3Nd:LiYF41313.040.433–0.62836.5–161.31.23[416]
    Bi2Te3Yb3+:GdAl3(BO3)41043.7, 1045.3, 1046.20.37–2.530–1100.5117[418]
    Bi2Te3Tm:LuAG20270.62–1.930–11818.4[419]
    Bi2Te3/grapheneTm:YAP19800.2381081.25[420]
    Er:YSGG27960.243881.25
    MoS2Nd:GdVO410600.9790–7320.31[78]
    Nd:YGG14200.72940–770.67
    Tm:Ho:YGG21000.41110–1491.38
    MoS2Nd:YAlO31079.570.227–0.5832–232.51.11[421]
    MoS2Yb:LGGG1025.2, 1028.10.18294–3331.8[422]
    MoS2Tm:CLNGG19794.84–680–1100.72[423]
    MoS2Tm:GdVO419020.8–225.58–48.092.08[424]
    MoS2Er:Lu2O328400.335–148–1218.5[425]
    MoS2Tm, Ho:YAP21290.43555--[426]
    MoS2+AOMNd:YVO410640.000851018.3[427]
    MoS2Er:YAG16451.13815–46.623.08[428]
    WS2Nd:GYSGG1057, 10610.62, 0.59135–67.35, 45–70.71.05[430]
    WS2Tm:LuAG2012.90.66–1.610–6317[431]
    WS2YVO4/Nd:YVO410640.056–0.24100–10301.6[432]
    WS2Tm, Ho∶LLF18954–6.811.29–16.895.21[433]
    WS2Nd:YVO410642.3–4.9455–1350.145[434]
    WS2+EOMNd:Lu0.15Y0.85VO410640.467519–731341.5[435]
    WSe2+EOMNd: YAG946.30.04951252630[436]
    ReS2Er:YSGG27960.324–1.147–1260.825[440]
    BPEr:SrF22790.1, 2790.90.702–1.561–77.032.34[441]
    BPTm:YAP1969, 19790.181–0.7241–8139.5[442]
    BPTm:YAP19881.78–411–19.257.84[443]
    BPYb:LuYAG10301.7363.90.09[444]
    Tm:CaYAlO4Er:Y2O319303.117.70.68
    27204.4712.60.48
    BPTm:YAG20092.9–96–11.63.32[445]
    BPCr:ZnSe24110.189–0.39698–1760.205[243]
    BPYb3+ScBO31063.60.4955–139320–301.4[446]
    BPHo3+,Pr3+:LiLuF429500.1943–0.5855–158.72.4[447]
    BPYb:CYA10460.62–1.287.7–113.60.3257[448]
    BPEr:YAG1645, LG0,1 mode3.2402150[449]
    LG0,+1 mode2.92400
    BP MoS2WS2Nd:YVO41064.40.00286--166[450]
    0.00399150
    0.0054365
    g-C3N4Er:Lu2O328400.351–1.548–9911.1[452]
    g-C3N4Nd:LLF1320.90.275–1.3112–1479.51[453]
    Table 7. Performance Summary of Q-switched Solid Lasers Based on 2D Noncarbon Materials
    2D MaterialsGain MediumCentral Wavelength (nm)Pulse Duration (ps)Repetition Rate (MHz)Pulse Energy (nJ)References
    WS2Yb:YAG10640.73686.73.11[456]
    MoS2a-cut Pr3+:GdLiF4522.446101.40.1[458]
    607.63090.20.2
    639.255104.40.21
    6392594.70.49
    MoS2Nd:GdTaO4106672583--[459]
    BPNd:YVO41064.16.11403.29[457]
    BPYb, Lu:CALGO1053.40.27263.36.48[455]
    BPNd:GdVO41340.79.2458.14--[460]
    MoS2Yb:YAG, disk103113.148.618.3[493]
    Table 8. Performance Summary of Mode-locked Solid/Disk Lasers Based on 2D Noncarbon Materials
    2D MaterialsGain MediumCentral Wavelength (nm)Pulse Duration (ns)Repetition Rate (MHz)Pulse Energy (nJ)References
    Bi2Se3Nd:YAG ceramic1064462.7–4.731.3[506]
    MoSe2WSe2Nd:YAG crystal1064800.995–3.33436[507]
    520.781–2.93819
    WSe2Yb:YSGG crystal1024.81250.3621.7[508]
    SnSe2Nd:YAG crystal10641290.337–2.294 (TE)6.7-44.5[509]
    1830.438–1.865 (TM)6.5-43.1
    MoS2Nd:YAG crystal1063.92030.51–1.1112[510]
    MoS2 BPNd:YAG ceramic1064243.23–6.125[511]
    554.3–5.623
    G/WS2 hetero-structureNd:YVO41064663.528–7.77733.1[512]
    Table 9. Performance Summary of Q-switched Waveguide Lasers Based on 2D Noncarbon Materials
    2D MaterialsIncorporation MethodCentral Wavelength (nm)Pulse Duration (ps)Repetition Rate (MHz)Pulse Energy (nJ)References
    G-Bi2Te3 heterostructureDeposited on fiber end1568.070.83717.30.178[519]
    G-Bi2Te3 heterostructureDeposited on fiber end1058.9189.94Harmonic, 79.133[520]
    G-Bi2Te3 heterostructureDeposited on fiber end1049.1144.33.7--[521]
    1565.61.16.9--
    WS2-MoS2-WS2 heterostructureDeposited on fiber end1562.660.29636.46--[522]
    G-BP heterostructureDeposited on D-shaped fiber1529.920.827.43--[523]
    BP QDPolymethylmethacrylate film1567.51.0815.22--[524]
    BP QDPolyvinylidene fluoride film1568.5 bound soliton0.78715.15--[525]
    0.81315.1
    0.74815
    BP QDDeposited on fiber end1567.61.0711.01--[526]
    P QDDeposited on tapered fiber1561.70.885.470.0247[527]
    BP QDDeposited on tapered fiber1562.80.29110.36--[528]
    Table 10. Performance Summary of Mode-locked Fiber Lasers Based on 2D Heterostructure/QD SAs
    Bo Guo. 2D noncarbon materials-based nonlinear optical devices for ultrafast photonics [Invited][J]. Chinese Optics Letters, 2018, 16(2): 020004
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