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Journals >Acta Physica Sinica >Volume 69 >Issue 1 >Page 018502-1 > Article

Acta Physica Sinica
Vol. 69, Issue 1, 018502-1 (2020)

Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors

Lei Dong, Jian-Qun Yang, Zhao-Feng Zhen, and Xing-Ji Li^*

DOI: 10.7498/aps.69.20191151 Cite this Article

Lei Dong, Jian-Qun Yang, Zhao-Feng Zhen, Xing-Ji Li. Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors[J]. Acta Physica Sinica, 2020, 69(1): 018502-1 Copy Citation Text

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Lei Dong, Jian-Qun Yang, Zhao-Feng Zhen, Xing-Ji Li. Effects of pre-irradiated thermal treatment on ideal factor of excess base current in bipolar transistors[J]. Acta Physica Sinica, 2020, 69(1): 018502-1

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