• Optoelectronics Letters
  • Vol. 9, Issue 1, 4 (2013)
Yan-lin ZHENG*, Kai-xin CHEN, and Lu-wen XIE
Author Affiliations
  • College of Communication and Information Engineering, University of Electronic Science and Techonolgy of China,Chengdu 611731, China
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    DOI: 10.1007/s11801-013-2339-5 Cite this Article
    ZHENG Yan-lin, CHEN Kai-xin, XIE Lu-wen. Design of strain-introduced MZI interleaver on LiNbO3 substrate[J]. Optoelectronics Letters, 2013, 9(1): 4 Copy Citation Text show less

    Abstract

    A strain-introduced Mach-Zehnder interferometer (MZI) interleaver on lithium niobate (LiNbO3) is proposed. The structure of the strain-introduced waveguide is designed in detail, and is produced by depositing a SiO2 film on the annealed proton-exchanged LiNbO3 waveguide. Considering the sensitivities of the edge strain to the deposition temperature and the thickness of the SiO2 film, an optimum design of 50 GHz interleaver on this structure is given through analyzing the effective index changes for Ex pq mode by finite difference method (FDM). The length of the bending waveguide in this interleaver is just two thirds of that in the conventional interleaver due to the high refractive index difference.
    ZHENG Yan-lin, CHEN Kai-xin, XIE Lu-wen. Design of strain-introduced MZI interleaver on LiNbO3 substrate[J]. Optoelectronics Letters, 2013, 9(1): 4
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