• Journal of Infrared and Millimeter Waves
  • Vol. 20, Issue 1, 73 (2001)
[in Chinese]1, [in Chinese]2, [in Chinese]3, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PREPARATION OF (Ba0.5Sr0.5)TiO3 THIN FILM BY SOL-GEL TECHNIQUE AND ITS CHARACTERISTICS[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 73 Copy Citation Text show less

    Abstract

    (Ba0.5Sr0.5)TiO3 ferroelectric thin films were prepared by Sol-Gel processing. Films with thickness of 160nm treated at 700℃ for 1h showed pure perovskite structure and good dielectric, insulating properties, i.e. a dielectric constant of 225, a dielectric loss of 0.04 4, a leakage current density of 8.0×10-8A/cm2. The leakage current density was found to depend on the annealing temperature. The measurement of the J-V characteristics on films indicated the conduction process to be bulk- limited.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PREPARATION OF (Ba0.5Sr0.5)TiO3 THIN FILM BY SOL-GEL TECHNIQUE AND ITS CHARACTERISTICS[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 73
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