[1] Shi J Y,Yu L P,Wang Y Z,et al.In fluence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN.Appl Phys Lett,2002,80(13): 2293~2295
[2] Moore W J,Freitas J A, Jr,et al.Magneto-optical studies of free-standing hydride-Vapor-phase epitaxial GaN.Phys Rev(B), 2002,65(8):0810201(R)
[4] Wang R P,Muto H,Yamada Y,et al.Effect of ZnO buffer layer on the quality of GaN films deposited by pulsed laser ablation.Thin Solid Films, 2002,411(1):69~75
[5] Willmott P R,Antonj F. Growth of GaN(0001) thin films on Si(001) by pulsed reactive crossed-beam laser ablation using liquid Ga and N2.Appl Phys Lett, 1998,73(10):1394~1396
[6] Rosner S J,Carr E C,Ludowise M J,et al.Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition.Appl Phys Lett, 1997,70(4):420~422
[7] Neugebauer J rg,Van de Walle Chris G.Gallium vacancies and the yellow luminescence in GaN.Appl Phys Lett, 1996,69(4):503~505
[9] Zubrilov A S,Nikishin S A,Kipshidze G D,et al.Optical properties of GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia.J Appl Phys,2002,91(3):1209~1212
[10] Huang H Y,Chuang C H,Shu C C,et al.Photoluminescence and photoluminescence excitation studies of as gtown and P-implanted GaN: on the nature of yellow luminescence.Appl Phys Lett, 2002,80(18): 3349