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    Journals >Acta Photonica Sinica >Volume 32 >Issue 12 >Page 1506 > Article
    • Acta Photonica Sinica
    • Vol. 32, Issue 12, 1506 (2003)
    Optical and Structural Properties of GaN Films Grown on Si Substrate by Excimer Pulsed Laser Deposition
    [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical and Structural Properties of GaN Films Grown on Si Substrate by Excimer Pulsed Laser Deposition[J]. Acta Photonica Sinica, 2003, 32(12): 1506 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical and Structural Properties of GaN Films Grown on Si Substrate by Excimer Pulsed Laser Deposition[J]. Acta Photonica Sinica, 2003, 32(12): 1506
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