• Chinese Journal of Lasers
  • Vol. 42, Issue 8, 817001 (2015)
Dong Yu1、*, Wang Guanglong1, Ni Haiqiao2, Chen Jianhui1, Qiao Zhongtao1, Pei Kangming2, Li Baochen1, and Niu Zhichuan2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/cjl201542.0817001 Cite this Article Set citation alerts
    Dong Yu, Wang Guanglong, Ni Haiqiao, Chen Jianhui, Qiao Zhongtao, Pei Kangming, Li Baochen, Niu Zhichuan. Optimization of Molecular Beam Epitaxy Conditions of Resonant Tunneling Diode Photodetector[J]. Chinese Journal of Lasers, 2015, 42(8): 817001 Copy Citation Text show less
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    [4] D Li, Y Jiang, Y J Ding, et al.. Approaching single-photon detection in near-infrared region[J]. Applied Physics Letters, 2012, 101(14): 141126.

    [5] R E Warburton, G Intermite, M Myronov, et al.. Ge-on-Si single-photon avalanche diode detectors: design, modeling, fabrication, and characterization at wavelengths 1310 and 1550 nm[J]. IEEE Transactions on Electron Devices, 2013, 60(11): 3807-3813.

    [6] A Restelli, J C Bienfang, A L Migdall. Single-photon detection efficiency up to 50% at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz[J]. Applied Physics Letters, 2013, 102(14): 141104.

    [7] X N Xu, Z D Xie, J J Zheng, et al.. Near-infrared Hong-Ou-Mandel interference on a silicon quantum photonic chip[J]. Optics Express, 2013, 21(4): 5014-5024.

    [8] J Mata Pavia, E Charbon, M Wolf. Single-photon avalanche diode imagers applied to near-infrared imaging[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 3800908.

    [9] A Gallivanoni, I Rech, M Ghioni. Progress in quenching circuits for single photon avalanche diodes[J]. IEEE Transactions on Nuclear Science, 2010, 57(6): 3815-3826.

    [10] Hai-Qiang Ma, Jian-Hui Yang, Ke-Jin Wei, et al.. Afterpulsing characteristics of InGaAs/InP single photon avalanche diodes[J]. Chinese Physics B, 2014, 23(12): 120308.

    [11] Hao He, Jun Ji, Mehua Bi, et al.. 20-Gbps low cost WDM-OFDM-PON downstream transmission with tunable filter and linear APD module[J]. Chin Opt Lett, 2014, 12(4): 040603.

    [12] F Hartmann, F Langer, D Bisping, et al.. GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer for telecommunication light sensing[J]. Applied Physics Letters, 2012, 100(17): 172113.

    [13] F Hartmann, F Langer, D Bisping, et al.. Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 mm photo sensors[C]. SPIE, 2012, 8511: 85110G-1.

    [14] A Pfenning, F Hartmann, F Langer, et al.. Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths[J]. Applied Physics Letters, 2014, 104(10): 101109.

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    CLP Journals

    [1] Pei Kangming, Zhan Feng, Ni Haiqiao, Dong Yu, Niu Zhichuan. Current Suppression of Resonant Tunneling Diode Photodetector Working at Near-Infrared Wavelengths[J]. Laser & Optoelectronics Progress, 2016, 53(2): 20402

    Dong Yu, Wang Guanglong, Ni Haiqiao, Chen Jianhui, Qiao Zhongtao, Pei Kangming, Li Baochen, Niu Zhichuan. Optimization of Molecular Beam Epitaxy Conditions of Resonant Tunneling Diode Photodetector[J]. Chinese Journal of Lasers, 2015, 42(8): 817001
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