Fig. 1. AFM morphologies of CQDRs formed at different Ga droplet deposition rates: (a) 0.09 ML/s; (b) 0.154 ML/s; (c) 0.25 ML/s; (d) 0.43 ML/s.不同Ga液滴沉积速率下CQDRs的AFM形貌图像(a) 0.09 ML/s; (b) 0.154 ML/s; (c) 0.25 ML/s; (d) 0.43 ML/s

Fig. 2. Density of GaAs CQDRs plotted as a function of Ga droplet deposition rate in logarithm scale.GaAs 的CQDRs密度与Ga液滴沉积速率ln-ln图像

Fig. 3. P-i graph of three states. Zone I, extreme incomplete condensation state; zone II, initially incomplete condensation state; zone III, transition state; zone IV, nucleation state. 三种状态的P-i图像(I区, 游离区; II区, 初始凝聚区; III区, 过渡区; IV区, 成核区)

Fig. 4. Fitting curves and the measurement schematic diagram of the radii of inner and outer ring for CQDRs: (a) Schematic diagram of inner and outer ring measurement; (b) fitting curve of the inner ring average radii; (c) fitting curve of the outer ring average radii.CQDRs 内、外环半径拟合曲线图及测量示意图　(a) 内外环测量示意图; (b) 内环平均半径拟合曲线图; (c) 外环平均半径拟合曲线图

Fig. 5. Schematic diagrams of CQDRs formation process: (a) The formation process of Ga droplet; (b) first crystallization process; (c) second crystallization process.CQDRs形成过程示意图　(a) Ga液滴形成过程; (b) 第一次晶化过程; (c) 第二次晶化过程