[1] D. Liang and J. E. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4, 511–517 (2010).
[2] G. Roelkens, L. Liu, D. Liang, R. Jones, A. Fang, B. Koch, and J. Bowers, “III-V/silicon photonics for on-chip and intra-chip optical interconnects,” Laser Photon. Rev. 4, 751–779 (2010).
[3] R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express 20, 11316–11320 (2012).
[4] S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grutzmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[5] O. Ueda and S. J. Pearton, Materials and Reliability Handbook for Semiconductor Optical and Electron Devices (Springer, 2013).
[6] J.-M. Gerard and C. Weisbuch, “Semiconductor structure for optoelectronic components with inclusions,” U.S. patent 5,075,742 (December 24, 1991).
[7] J. Gérard, O. Cabrol, and B. Sermage, “InAs quantum boxes: highly efficient radiative traps for light emitting devices on Si,” Appl. Phys. Lett. 68, 3123–3125 (1996).
[8] K. Linder, J. Phillips, O. Qasaimeh, X. Liu, S. Krishna, P. Bhattacharya, and J. Jiang, “Self-organized In0.4Ga0.6As quantum- dot lasers grown on Si substrates,” Appl. Phys. Lett. 74, 1355–1357 (1999).
[9] Z. Mi, P. Bhattacharya, J. Yang, and K. Pipe, “Room-temperature self-organised In0.5Ga0.5As quantum dot laser on silicon,” Electron. Lett. 41, 742–744 (2005).
[10] J. Yang, P. Bhattacharya, and Z. Mi, “High-performance In0.5Ga0.5As/GaAs quantum-dot lasers on silicon with multiplelayer quantum-dot dislocation filters,” IEEE Trans. Electron Devices 54, 2849–2855 (2007).
[11] Z. Mi, J. Yang, P. Bhattacharya, G. Qin, and Z. Ma, “Highperformance quantum dot lasers and integrated optoelectronics on Si,” Proc. IEEE 97, 1239–1249 (2009).
[12] T. Wang, H. Liu, A. Lee, F. Pozzi, and A. Seeds, “1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates,” Opt. Express 19, 11381–11386 (2011).
[13] A. Lee, Q. Jiang, M. Tang, A. Seeds, and H. Liu, “Continuouswave InAs/GaAs quantum-dot laser diodes monolithically grown on Si substrate with low threshold current densities,” Opt. Express 20, 22181–22187 (2012).
[14] S. Chen, M. Tang, J. Wu, Q. Jiang, V. Dorogan, M. Benamara, Y. Mazur, G. Salamo, A. Seeds, and H. Liu, “1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C,” Electron. Lett. 50, 1467–1468 (2014).
[15] A. Y. Liu, C. Zhang, J. Norman, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. Liu, A. C. Gossard, and J. E. Bowers, “High performance continuous wave 1.3 μm quantum dot lasers on silicon,” Appl. Phys. Lett. 104, 041104 (2014).
[16] D. A. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE 97, 1166–1185 (2009).
[17] D. Bimberg and U. W. Pohl, “Quantum dots: promises and accomplishments,” Mater. Today 14(9), 388–397 (2011).
[18] T. Kageyama, K. Nishi, M. Yamaguchi, R. Mochida, Y. Maeda, K. Takemasa, Y. Tanaka, T. Yamamoto, M. Sugawara, and Y. Arakawa, “Extremely high temperature (220°C) continuouswave operation of 1300-nm-range quantum-dot lasers,” in The European Conference on Lasers and Electro-Optics (Optical Society of America, 2011).
[19] Y. Urino, N. Hatori, K. Mizutani, T. Usuki, J. Fujikata, K. Yamada, T. Horikawa, T. Nakamura, and Y. Arakawa, “First demonstration of athermal silicon optical interposers with quantum dot lasers operating up to 125°C,” J. Lightwave Technol. 33, 1223–1229 (2014).
[20] D. Livshits, A. Gubenko, S. Mikhrin, V. Mikhrin, C.-H. Chen, M. Fiorentino, and R. Beausoleil, “High efficiency diode comb-laser for DWDM optical interconnects,” in IEEE Optical Interconnects Conference (2014), pp. 83–84.
[21] C.-H. J. Chen, T.-C. Huang, D. Livshit, A. Gubenko, S. Mikhrin, V. Mikhrin, M. Fiorentino, and R. Beausoleil, “A comb laserdriven DWDM silicon photonic transmitter with microring modulator for optical interconnect,” in CLEO: Science and Innovations (Optical Society of America, 2015), paper STu4F-1.
[22] K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci. Rep. 2, 349 (2012).
[23] K. Tanabe, T. Rae, K. Watanabe, and Y. Arakawa, “Hightemperature 1.3 μm InAs/GaAs quantum dot lasers on Si substrates fabricated by wafer bonding,” Appl. Phys. Express 6, 082703 (2013).
[24] K. Tanabe and Y. Arakawa, “1.3 μm InAs/GaAs quantum dot lasers on SOI waveguide structures,” in CLEO: Science and Innovations (Optical Society of America, 2014), paper STh1G-6.
[25] Y.-H. Jhang, K. Tanabe, S. Iwamoto, and Y. Arakawa, “InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metalstripe wafer bonding,” IEEE Photon. Technol. Lett. 27, 875–878 (2015).
[26] H. Liu, T. Wang, Q. Jiang, R. Hogg, F. Tutu, F. Pozzi, and A. Seeds, “Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate,” Nat. Photonics 5, 416–419 (2011).
[27] R. R. Alexander, D. T. Childs, H. Agarwal, K. M. Groom, H.-Y. Liu, M. Hopkinson, R. A. Hogg, M. Ishida, T. Yamamoto, M. Sugawara, Y. Arakawa, T. J. Badcock, R. J. Royce, and D. J. Mowbray, “Systematic study of the effects of modulation p-doping on 1.3-μm quantum-dot lasers,” IEEE J. Quantum Electron. 43, 1129–1139 (2007).
[28] L. Y. Karachinsky, T. Kettler, I. Novikov, Y. M. Shernyakov, N. Y. Gordeev, M. Maximov, N. Kryzhanovskaya, A. Zhukov, E. Semenova, A. Vasil’Ev, V. Ustinov, G. Fiol, M. Kuntz, A. Lochmann, O. Schulz, L. Reissmann, K. Posilovic, R. Kovsh, S. Mikhrin, V. Shchukin, N. Ledentsov, and D. Bimberg, “Metamorphic 1.5 μm-range quantum dot lasers on a GaAs substrate,” Semicond. Sci. Technol. 21, 691 (2006).
[29] C. Gilfert, V. Ivanov, N. Oehl, M. Yacob, and J. Reithmaier, “High gain 1.55 μm diode lasers based on InAs quantum dot like active regions,” Appl. Phys. Lett. 98, 201102 (2011).
[30] A. Y. Liu, C. Zhang, A. Snyder, D. Lubyshev, J. M. Fastenau, A. W. Liu, A. C. Gossard, and J. E. Bowers, “MBE growth of P-doped 1.3 μm InAs quantum dot lasers on silicon,” J. Vac. Sci. Technol. B 32, 02C108 (2014).
[31] Z. I. Kazi, P. Thilakan, T. Egawa, M. Umeno, and T. Jimbo, “Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition,” Jpn J. Appl. Phys. 40, 4903 (2001).
[32] J. Li, J. Hydrick, J. Park, J. Li, J. Bai, Z. Cheng, M. Carroll, J. Fiorenza, A. Lochtefeld, W. Chan, and Z. Shellenbarger, “Monolithic integration of GaAs/InGaAs lasers on virtual Ge substrates via aspect-ratio trapping,” J. Electrochem. Soc. 156, H574–H578 (2009).
[33] X. Huang, Y. Song, T. Masuda, D. Jung, and M. Lee, “InGaAs/ GaAs quantum well lasers grown on exact GaP/Si (001),” Electron. Lett. 50, 1226–1227 (2014).
[34] L. Kimerling, “Recombination enhanced defect reactions,” Solid- State Electron. 21, 1391–1401 (1978).
[35] A. Liu, R. Herrick, O. Ueda, P. Petroff, A. Gossard, and J. Bowers, “Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon,” IEEE J. Sel. Top. Quantum Electron. 21, 1900708 (2015).
[36] P. Petroff and R. Hartman, “Defect structure introduced during operation of heterojunction GaAs lasers,” Appl. Phys. Lett. 23, 469–471 (1973).
[37] R. Beanland, A. Sanchez, D. Childs, K. Groom, H. Liu, D. Mowbray, and M. Hopkinson, “Structural analysis of life tested 1.3 μm quantum dot lasers,” J. Appl. Phys. 103, 014913 (2008).
[38] R. Beanland, J. David, and A. Sanchez, “Quantum dots in strained layers preventing relaxation through the precipitate hardening effect,” J. Appl. Phys. 104, 123502 (2008).
[39] E. Fitzgerald and N. Chand, “Epitaxial necking in GaAs grown on pre-pattemed Si substrates,” J. Electron. Mater. 20, 839–853 (1991).
[40] X. Zhang, P. Li, G. Zhao, D. W. Parent, F. Jain, and J. Ayers, “Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls,” J. Electron. Mater. 27, 1248–1253 (1998).
[41] M. J. Heck and J. E. Bowers, “Energy efficient and energy proportional optical interconnects for multi-core processors: driving the need for on-chip sources,” IEEE J. Sel. Top. Quantum Electron. 20, 332–343 (2014).
[42] A. Able, W. Wegscheider, K. Engl, and J. Zweck, “Growth of crack-free GaN on Si (111) with graded AlGaN buffer layers,” J. Cryst. Growth 276, 415–418 (2005).
[43] S. Zamek, L. Feng, M. Khajavikhan, D. T. Tan, M. Ayache, and Y. Fainman, “Micro-resonator with metallic mirrors coupled to a bus waveguide,” Opt. Express 19, 2417–2425 (2011).
[44] D. Liang, S. Srinivasan, D. Fattal, M. Fiorentino, Z. Huang, D. Spencer, J. Bowers, and R. Beausoleil, “Teardrop reflectorassisted unidirectional hybrid silicon microring lasers,” IEEE Photon. Technol. Lett. 24, 1988–1990 (2012).
[45] J. K. Kim, R. L. Naone, and L. A. Coldren, “Lateral carrier confinement in miniature lasers using quantum dots,” IEEE J. Sel. Top. Quantum Electron. 6, 504–510 (2000).
[46] S. A. Moore, L. O’Faolain, M. A. Cataluna, M. B. Flynn, M. V. Kotlyar, and T. F. Krauss, “Reduced surface sidewall recombination and diffusion in quantum-dot lasers,” IEEE Photon. Technol. Lett. 18, 1861–1863 (2006).
[47] E. Yablonovitch, C. Sandroff, R. Bhat, and T. Gmitter, “Nearly ideal electronic properties of sulfide coated GaAs surfaces,” Appl. Phys. Lett. 51, 439–441 (1987).
[48] M. Boroditsky, I. Gontijo, M. Jackson, R. Vrijen, E. Yablonovitch, T. Krauss, C.-C. Cheng, A. Scherer, R. Bhat, and M. Krames, “Surface recombination measurements on III-V candidate materials for nanostructure light-emitting diodes,” J. Appl. Phys. 87, 3497–3504 (2000).
[49] V. Chobpattana, E. Mikheev, J. Y. Zhang, T. E. Mates, and S. Stemmer, “Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities,” J. Appl. Phys. 116, 124104 (2014).