[1] Ye S, Xiao F, Pan Y X, Ma Y Y and Zhang Q Y, Mater. Sci. Eng. R 71, 1 (2010).
[2] WU Dong-ni, CUI Rui-rui and DENG Chao-yong, Journal of Optoelectronics·Laser 25, 1516 (2014). (in Chinese)
[3] WU Xia, LI Xu-cheng, LUO Si-yuan, GONG Xin-yong and DENG Chao-yong, Journal of Optoelectronics ·Laser 24, 2162 (2013). (in Chinese)
[4] Chen W-T, Sheu H-S, Liu R-S and Attfield J P, J. Am. Chem. Soc. 134, 8022 (2012).
[5] Li Jian, Deng Jia-chun, Lu Qi-fei and Wang Da-jian, Optoelectronics Letters 9, 293 (2013).
[7] Yi L, Zhou L, Gong F, Lan Y, Tong Z and Sun J, Mater. Sci. Eng. B 172, 132 (2010).
[8] Li P, Wang Z, Yang Z and Guo Q, J. Solid State Chem. 220, 227 (2014).
[9] Yang W-J and Chen T-M, Appl. Phys. Lett. 88, 101903 (2006).
[10] Wang Z, Li P, Yang Z and Guo Q, J. Lumin. 132, 1944 (2012).
[11] Ding H, Huang Y, Wei D, Shi L, Qiao X and Seo H J, J. Electrochem. Soc. 156, J312 (2009).
[12] Sarver J F, Hoffman M V and Hummel F A, J. Electrochem. Soc. 108, 1103 (1961).
[13] Hemon A and Courbion G, J. Solid State Chem. 85, 164 (1990).
[14] Huang C-H and Chen T-M, Inorg. Chem. 50, 5725 (2011).
[15] G. Blasse, Phys. Lett. 28A, 444 (1968).
[16] D. L. Dexter and J. H. Schulman, J. Chem. Phys. 22, 1063 (1954).
[17] W. J. Yang, L. Luo, T. M. Chen and N. S. Wang, Chem. Mater. 17, 3883 (2005).