• Acta Photonica Sinica
  • Vol. 50, Issue 9, 0904002 (2021)
Lihua HE1, Enlong LI1, Rengjian YU1, Huipeng CHEN1、*, and Guocheng ZHANG1、2、*
Author Affiliations
  • 1National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou35002,China
  • 2Research Center for Microelectronics Technology, Fujian University of Technology, Fuzhou350108,China
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    DOI: 10.3788/gzxb20215009.0904002 Cite this Article
    Lihua HE, Enlong LI, Rengjian YU, Huipeng CHEN, Guocheng ZHANG. Multistage Photosynaptic Transistor Based on the Regulation of Ferroelectric P(VDF-TrFE)[J]. Acta Photonica Sinica, 2021, 50(9): 0904002 Copy Citation Text show less
    Schematic illustration of chemical materials PDVT-10
    Fig. 1. Schematic illustration of chemical materials PDVT-10
    The structure and working principle of synaptic transistor device
    Fig. 2. The structure and working principle of synaptic transistor device
    AFM images of P(VDF-TrFe) layer before and after ALD
    Fig. 3. AFM images of P(VDF-TrFe) layer before and after ALD
    The absorption spectrum of the PDVT-10
    Fig. 4. The absorption spectrum of the PDVT-10
    Synaptic structures and its basic performance
    Fig. 5. Synaptic structures and its basic performance
    PPF performance of synaptic transistors in polarized state 1
    Fig. 6. PPF performance of synaptic transistors in polarized state 1
    Multi-level photosynaptic properties
    Fig. 7. Multi-level photosynaptic properties
    Lihua HE, Enlong LI, Rengjian YU, Huipeng CHEN, Guocheng ZHANG. Multistage Photosynaptic Transistor Based on the Regulation of Ferroelectric P(VDF-TrFE)[J]. Acta Photonica Sinica, 2021, 50(9): 0904002
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