• Chinese Journal of Lasers
  • Vol. 31, Issue 8, 971 (2004)
[in Chinese]1、*, [in Chinese]2, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese]. 1.3 μm High-Gain Polarization-Insensitive Strained Quantum-Well Semiconductor Optical Amplifier[J]. Chinese Journal of Lasers, 2004, 31(8): 971 Copy Citation Text show less
    References

    [3] S. Kitamura, H. Hatakeyama, K. Hamamoto et al.. Spot-size converter integrated semiconductor optical amplifiers for optical gate applications[J]. IEEE J. Quantum Electron., 1999, 35(7):1067~1074

    [4] J. P. R. Lacey, S. J. Madden, M. A. Summerfield. Four-channel polarization-insensitive optically-transparent wavelength converter[J]. IEEE Photon. Technol. Lett., 1997, 9(10):1355~1357

    [5] G. Jeong, J. W. Goodman. Gain optimization in switches based on semiconductor optical amplifiers[J]. J. Ligtwave Technol., 1995, 13(4):598~605

    [9] M. Joma, H. Horikawa, C. Q. Xu et al.. Polarization insensitive semiconductor laser amplifiers with tensile strained InGaAsP/InGaAsP multiple quantum well structure[J]. Appl. Phys. Lett., 1993, 62(2):121~122

    [10] A. Ougazzaden, D. Sigogne, A. Mircea et al.. Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier[J]. Electron. Lett., 1995, 31(15):1242~1244

    [11] A. Mathur, P. D. Dapkus. Polarization insensitive strained quantum well gain medium for lasers and optical amplifiers[J]. Appl. Phys. Lett., 1992, 61(24):2845~2847

    [12] P. Koonath, S. Kim, W. Cho et al.. Polarization-insensitive quantum-well semiconductor optical amplifiers[J]. IEEE J. Quantum Electron., 2002, 38(9):1282~1290

    [in Chinese], [in Chinese], [in Chinese]. 1.3 μm High-Gain Polarization-Insensitive Strained Quantum-Well Semiconductor Optical Amplifier[J]. Chinese Journal of Lasers, 2004, 31(8): 971
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