Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer

Jia-Long Wu; Yong-Jiang Dou; Jian-Feng Zhang; Hao-Ran Wang; Xu-Yong Yang

doi:10.7498/aps.69.20191269

Journals >Acta Physica Sinica >Volume 69 >Issue 1 >Page 018101-1 > Article

Acta Physica Sinica
Vol. 69, Issue 1, 018101-1 (2020)

Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer

Jia-Long Wu¹, Yong-Jiang Dou², Jian-Feng Zhang², Hao-Ran Wang², and Xu-Yong Yang^2、*

Author Affiliations

¹Shanghai University Microelectronic R&D Center, Shanghai University, Shanghai 201900, China

²Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200040, China

show less

DOI: 10.7498/aps.69.20191269 Cite this Article

Jia-Long Wu, Yong-Jiang Dou, Jian-Feng Zhang, Hao-Ran Wang, Xu-Yong Yang. Perovskite light-emitting diodes based on solution-processed metal-doped nickel oxide hole injection layer[J]. Acta Physica Sinica, 2020, 69(1): 018101-1 Copy Citation Text

show less

$(a) Device structure; (b) cross-sectional SEM image of the device; (c) energy band diagram; (d) XRD diffraction pattern of the FAPbBr3 NCs (inset: TEM image of the FAPbBr3 NCs).(a) 器件结构示意图; (b) 器件横断面SEM截面图; (c) 能级结构示意图; (d) FAPbBr3 NCs的XRD图谱(插图为其TEM图)$

Fig. 1. (a) Device structure; (b) cross-sectional SEM image of the device; (c) energy band diagram; (d) XRD diffraction pattern of the FAPbBr₃ NCs (inset: TEM image of the FAPbBr₃ NCs). (a) 器件结构示意图; (b) 器件横断面SEM截面图; (c) 能级结构示意图; (d) FAPbBr₃ NCs的XRD图谱(插图为其TEM图)

Download full size | View in the Article

(a) Normalized electroluminescence and photoluminescence spectra of the device; (b) J-V characteristics, (c) L-V characteristics, and (d) CE-EQE-V characteristics of the PEDOT:PSS- and NiO-based device.(a) 器件的归一化电致发光和光致发光光谱; PEDOT:PSS和NiO空穴注入层器件的(b) 电流密度-电压曲线, (c) 亮度-电压曲线和(d)电流密度-外量子效率-电压特性

Fig. 2. (a) Normalized electroluminescence and photoluminescence spectra of the device; (b) J-V characteristics, (c) L-V characteristics, and (d) CE-EQE-V characteristics of the PEDOT:PSS- and NiO-based device. (a) 器件的归一化电致发光和光致发光光谱; PEDOT:PSS和NiO空穴注入层器件的(b) 电流密度-电压曲线, (c) 亮度-电压曲线和(d)电流密度-外量子效率-电压特性

Download full size | View in the Article

Fig. 3. Operating lifetime characteristics of the PEDOT:PSS and NiO-based devices.PEDOT:PSS和NiO空穴注入层的器件寿命特性图

Download full size | View in the Article

Fig. 4. (a) J-L-V characteristics of the devices with Cs: NiO; (b) CE-EQE-V characteristics of the devices with Cs: NiO; (c) J-L-V characteristics of the devices with Li: NiO; (d) CE-EQE-V characteristics of the devices with Li: NiO at different concentrations (2, 4 and 6 mol%). 掺杂不同浓度(2, 4, 6 mol%)Cs的NiO器件的(a) 电流密度-亮度-电压特性和(b)电流效率-外量子效率-电压特性; 掺杂不同浓度(2, 4, 6 mol%)Li的NiO器件的(c) 电流密度-亮度-电压特性和(d)电流效率-外量子效率-电压特性

Download full size | View in the Article

金属掺杂浓度	V_on/V^a	L_max/ cd·m^–2^b	CE/ cd·A^–1^c	EQE/% ^d
^a开启电压, 亮度为1 cd·m^–2 时的电压; ^b最高的亮度; ^c最高的电流效率; ^d最高的外量子效率.
2 mol% Cs	3	2970	43.0	11.0
4 mol% Cs	3	2610	27.8	7.1
6 mol% Cs	3	2090	8.7	2.2
2 mol% Li	3	2500	32.3	8.3
4 mol% Li	3	3490	41.8	10.7
6 mol% Li	3	2950	16.0	4.1

Table 1.

The performance of devices with metal-doped NiO.

金属掺杂NiO的器件性能

金属掺杂浓度	ρ/Ω·cm ^a	μ/cm²·V^–1·s^–1^b	p/cm^–3^c
^a电阻率; ^b迁移率; ^c载流子浓度(空穴).
0	2.6 × 10^–1	1.7	2.1 × 10¹⁸
2 mol% Cs	1.8 × 10^–1	1.5	5.3 × 10¹⁸
4 mol% Cs	1.7 × 10^–1	0.5	6.0 × 10¹⁸
6 mol% Cs	1.4 × 10^–1	0.2	7.4 × 10¹⁸
2 mol% Li	2.2 × 10^–1	1.3	4.6 × 10¹⁸
4 mol% Li	1.8 × 10^–1	1.1	5.7 × 10¹⁸
6 mol% Li	1.5 × 10^–1	0.3	6.9 × 10¹⁸

Table 2.

Electrical properties of Cs-doped NiO films.

Cs掺杂NiO薄膜的电学性能

Download Citation

Save the article for my favorites

Paper Information