Fig. 1. (a) Device structure; (b) cross-sectional SEM image of the device; (c) energy band diagram; (d) XRD diffraction pattern of the FAPbBr₃ NCs (inset: TEM image of the FAPbBr₃ NCs). (a) 器件结构示意图; (b) 器件横断面SEM截面图; (c) 能级结构示意图; (d) FAPbBr₃ NCs的XRD图谱(插图为其TEM图)

Fig. 2. (a) Normalized electroluminescence and photoluminescence spectra of the device; (b) J-V characteristics, (c) L-V characteristics, and (d) CE-EQE-V characteristics of the PEDOT:PSS- and NiO-based device. (a) 器件的归一化电致发光和光致发光光谱; PEDOT:PSS和NiO空穴注入层器件的(b) 电流密度-电压曲线, (c) 亮度-电压曲线和(d)电流密度-外量子效率-电压特性

Fig. 3. Operating lifetime characteristics of the PEDOT:PSS and NiO-based devices.PEDOT:PSS和NiO空穴注入层的器件寿命特性图

Fig. 4. (a) J-L-V characteristics of the devices with Cs: NiO; (b) CE-EQE-V characteristics of the devices with Cs: NiO; (c) J-L-V characteristics of the devices with Li: NiO; (d) CE-EQE-V characteristics of the devices with Li: NiO at different concentrations (2, 4 and 6 mol%). 掺杂不同浓度(2, 4, 6 mol%)Cs的NiO器件的(a) 电流密度-亮度-电压特性和(b)电流效率-外量子效率-电压特性; 掺杂不同浓度(2, 4, 6 mol%)Li的NiO器件的(c) 电流密度-亮度-电压特性和(d)电流效率-外量子效率-电压特性