Amorphous Si-Nx:H films with low hydrogen contenthave been deposited using a CO2 laser assisted PECVD, or LAPECVD system. Inthis system, thin Si-Nx:H films were grown under conventional capacitive RF (13.56 MHz)discharge, with a CO2 laser beam hitting on a part of the substratesimultaneously. Either the substrates were resistively heated or not, these films wereproved to have larger index of refraction and better surface flatness. Besides, theirresistance to corrosion was considerably improved as compared to films grown underconventional PECVD process. While the resistive heating was replaced by appropriate CO2laser irradiation, the absorption of laser beam raised the substrate-thin film temperatureup to 55℃ only, andthe irradiation of laser beam reduced effectively the amount of hydrogen bond in thefilms. This non-thermic process proved that laser light at 10.58 μm wavelength gave more satisfactory results than at 9.52 μm, possible reason of thisobservation is postulated in this paper.