[1] Turnbull A A,Evans G B.Photoemission from GaAs-Cs-O. Journal of Physics D: Applied Physics,1968,1:155~160
[2] Fisher D G. The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes.IEEE Transactions on Electron Devices, 1974,ED-21:541~542
[3] Williams B F,Tietjien J J.Current status of negative electron affinity devices.Proceedings of the IEEE, 1971,59(10):1489~1497
[4] Fisher D G,Enstrom R E,Escher J S,et al. Photoelectron surface escape probability of (Ga,In)As: Cs-O in the 0.9 to 1.6 μm.Journal of Applied Physics,1972,43(9):3815~3823
[5] Spicer W E,Lindau I,Su C Y,et al. Core-level photoemission of the Cs-O adlayer of NEA GaAs photocathodes.Applied Physics Letters, 1978,33(11):934~935
[9] Goldstein B. LEED-AUGER characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and O.Surface Science,1975,47:143~161
[10] Rodway D C,Allenson M B. In situ suurface study of the activating layer on GaAs(Cs,O) photocathodes.Journal of Physics.D: Applied Physics, 1986,19:1353~1371
[11] Sen P,Pickard D S,Schneider J E,et al. Lifetime and reliability results for a negative electron affinity photocathode in a demountable vacuum system.The Journal of Vacuum Science and Technology,1998,B16(6):3380~3384