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    Journals >Chinese Journal of Lasers >Volume 7 >Issue 5-6 >Page 118 > Article
    • Chinese Journal of Lasers
    • Vol. 7, Issue 5-6, 118 (1980)
    Selective thermal oxidation of gallium arsenide-A new technology for GaAs-GaAlAs strips DH lasers and semiconductor integrated optics
    Liu Hongdu, Zhang Bei, Wang Dehuang, and Chen Weixi
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    Liu Hongdu, Zhang Bei, Wang Dehuang, Chen Weixi. Selective thermal oxidation of gallium arsenide-A new technology for GaAs-GaAlAs strips DH lasers and semiconductor integrated optics[J]. Chinese Journal of Lasers, 1980, 7(5-6): 118 Copy Citation Text show less

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    Liu Hongdu, Zhang Bei, Wang Dehuang, Chen Weixi. Selective thermal oxidation of gallium arsenide-A new technology for GaAs-GaAlAs strips DH lasers and semiconductor integrated optics[J]. Chinese Journal of Lasers, 1980, 7(5-6): 118
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    Paper Information
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