• Chinese Journal of Lasers
  • Vol. 22, Issue 2, 91 (1995)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Semiconductor Lasers Threshold Features[J]. Chinese Journal of Lasers, 1995, 22(2): 91 Copy Citation Text show less

    Abstract

    Within the frame of the mean field,using Lorentzian functions to model the gain and spontaneous emission,implicit analytical solutions to the mutli-mode rate equations, including the contributions of spontaneous emission to various diode modes, have been obtained. As a result,with the emphasis on the threshold region,several laser characteristics of importance,such as the carrier density, photon density,etc.have been investigated theoretically and experimentally.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Studies on Semiconductor Lasers Threshold Features[J]. Chinese Journal of Lasers, 1995, 22(2): 91
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