[1] L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
[2] K. A. Littau, P. J. Szajowski, A. J. Muller, A. R. Kortan, and L. E. Brus, J. Phys. Chem. 97, 1224 (1993).
[3] A. Pérez-Rodríguez, O. González-Varona, B. Garrido, P. Pellegrino, J. R. Morante, C. Bonafos, M. Carrada, and A. Claverie, J. Appl. Phys. 94, 254 (2003).
[4] D. Pacifici, E. C. Moreira, G. Franzò, V. Martorino, F. Priolo, and F. Iacona, Phys. Rev. B 65, 144109 (2002).
[5] D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, and S. D. Brorson, J. Appl. Phys. 56, 401 (1984).
[6] V. A. Gritsenko, Structure and Electronic Properties of Amorphous Insulators in Silicon MIS Structures (Science, Novosibirsk, 1993).
[7] V. A. Gritsenko, in Silicon Nitride in Electronics V. I. Belyi, (ed.) (Elsevier, New York, 1988).
[8] V. A. Gritsenko and E. E. Meerson, Sov. Microelectron. 17, 249 (1988).
[9] V. A. Gritsenko and E. E. Meerson, Phys. Stat. Sol. (a) 62, K131 (1980).
[10] V. A. Volodin, M. D. Efremov, and V. A. Gritsenko, Solid State Phenomena 57~58, 501 (1997).
[11] Y. Q. Wang, Y. G. Wang, L. Cao, and Z. X. Cao, Appl. Phys. Lett. 83, 3474 (2003).
[12] H.-S. Kwack, Y. Sun, Y.-H. Cho, N.-M. park, and S.-J. park, Appl. Phys. Lett. 83, 2901 (2003).
[13] Z. T. Kang, B. K. Wagner, J. Parrish, D. Schiff, and C. J. Summers, Nanotechnol. 18, 415709 (2007).
[14] C.-H. Cho, B.-H. Kim, T.-W. Kim, S.-J. Park, N.-M. Park, and G.-Y. Sung, Appl. Phys. Lett. 86, 143107 (2005).
