${\left(\frac{\mathrm{\Delta }V}{V_0}\right)}_{\mathrm{s}\mathrm{a}\mathrm{t}}$：饱和肿胀体积变化率^[17]

Saturated swelling volume change / %

T_irr：辐照温度 Irradiation temperature / K

${\left(\frac{\mathrm{\Delta }V}{V_0}\right)}_{\mathrm{i}\mathrm{r}\mathrm{r}}$：辐照肿胀体积变化率^[18]

Irradiation swelling volume change / %

γ：辐照剂量 Irradiation dose / dpa

${\gamma }_{\mathrm{s}\mathrm{a}\mathrm{t}}$= 1 dpa

$K_{\mathrm{i}\mathrm{r}\mathrm{r}}^{\mathrm{C}\mathrm{V}\mathrm{D}}$：CVD辐照后热导率^[17]

Thermal conductivity of CVD SiC after irradiation / W·m^-1·K^-1

$K_{\mathrm{n}\mathrm{o}\mathrm{n}\_\mathrm{i}\mathrm{r}\mathrm{r}}^{\mathrm{C}\mathrm{M}\mathrm{C}}$：CMC未受辐照热导率^{[19] -}

Thermal conductivity of CMC SiC without irradiation / W·m^-1·K^-1

$K_{\mathrm{i}\mathrm{r}\mathrm{r}\_\mathrm{s}\mathrm{a}\mathrm{t}}^{\mathrm{C}\mathrm{M}\mathrm{C}}$：CMC辐照后热导率^[19]

Thermal conductivity of CMC SiC after irradiation / W·m^-1·K^-1

α：热膨胀系数^[20]

Thermal expansivity / K^-1

$E_{\mathrm{n}\mathrm{o}\mathrm{n}\_\mathrm{i}\mathrm{r}\mathrm{r}}^{\mathrm{C}\mathrm{V}\mathrm{D}}$：CVD未受辐照杨氏模量^[21]

CVD unirradiated Young's modulus / Pa

V_p：CVD孔隙率 CVD Porosity, 0.02

$E_{\mathrm{i}\mathrm{r}\mathrm{r}}^{\mathrm{C}\mathrm{V}\mathrm{D}}$：CVD辐照后杨氏模量^[22]

CVD irradiated Young's modulus / Pa

CVD/CMC泊松比

CVD and CMC Poisson's ratio

活性区长度 Activate length

上空腔长度 Plenum length

3.657 6 m

0.175 m

初始内压 Initial rod pressure

栅距 Rod pitch

2.41 MPa

12.6 mm