Experimental studies of semiconductor laser with AlN films

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 18 >Issue 5 >Page 324 > Article

Chinese Journal of Lasers
Vol. 18, Issue 5, 324 (1991)

Experimental studies of semiconductor laser with AlN films

[in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental studies of semiconductor laser with AlN films[J]. Chinese Journal of Lasers, 1991, 18(5): 324 Copy Citation Text

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Abstract

Experimental reaulst for semiconductor lasers with facet antireflector and surface passivator by sputtered A1N films are reported for the first time. The results show that these LD with sputtered A1N film as surface passivator have good lasing properties.

Keywords

AlN film Semiconductor laser

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Experimental studies of semiconductor laser with AlN films[J]. Chinese Journal of Lasers, 1991, 18(5): 324

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