Silicon micro-strip detectors are fabricated by a micro-electronic process. Their performance will become worse, even failure when they suffer from various contaminations. Moreover, the naked bond wires are also easily disabled by external forces. The research for above mentioned events is available to repair and maintain these detectors, and to improve their performance. This paper analyses the detectors' structure and fabrication process, and cleans them in different conditions according to the characters of contamination. After a measurement, it repairs them based on the chip graphics, packaging means and the electronics demand. Finally, the α isotope energy spectrum is used to measure the repaired detectors. A repaired detector shows that when the N-side is earthed and the P-side is biased negative 170 V, the detector is depleted and its average leakage current is 2.94 μA. By bonding again, the ghost peaks in the energy spectra caused by the strips whose bond wire is invalid on the other side are eliminated. The results also indicate that most disabled detectors can be revived by reasonable cleaning and repairing, but the cleaning might damage the surface or structure of the detector, so it must be careful and not frequently. Furthermore, when a bond wire is invalid, the electric charge could not be led out, so they are accumulated and influence other sensitive region by charge effect. It points out that the detector should be stored a place in cleaning, thermostatic and low-humidity conditions and without light and strong electromagnetic waves. these methods would be beneficial to improving their energy resolution, position resolution ,stability and working life.