• Chinese Journal of Lasers
  • Vol. 45, Issue 3, 301001 (2018)
Ling Weijun1, Xia Tao1, Dong Zhong1、*, Zuo Yinyan1, Li Ke1, Liu Qing1, Lu Feiping1, and Wang Yonggang2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/CJL201845.0301001 Cite this Article Set citation alerts
    Ling Weijun, Xia Tao, Dong Zhong, Zuo Yinyan, Li Ke, Liu Qing, Lu Feiping, Wang Yonggang. Passively Q-switched Mode-Locked Low Threshold Tm,Ho∶LiLuF4 Laser with a Graphene Oxide Saturable Absorber[J]. Chinese Journal of Lasers, 2018, 45(3): 301001 Copy Citation Text show less

    Abstract

    We demonstrate a stable, low threshold, passive Q-switched mode-locked Tm, Ho∶LiLuF4 solid-state laser with the graphene oxide (GO) prepared by vertical growth method as a saturable absorber and the special designed low threshold resonant cavity. The output power of the laser is as low as 73 mW, the stable mode-locked threshold power is 663 mW, and the corresponding power density of the GO saturable absorber is 76.4 μJ·cm-2. Typical Q-switched pulse envelope has a repetition frequency of 104.2 kHz and a pulse width of 30 μs. The repetition frequency of mode-locked pulse sequence is 178.6 MHz, and the modulation depth is close to 100%.
    Ling Weijun, Xia Tao, Dong Zhong, Zuo Yinyan, Li Ke, Liu Qing, Lu Feiping, Wang Yonggang. Passively Q-switched Mode-Locked Low Threshold Tm,Ho∶LiLuF4 Laser with a Graphene Oxide Saturable Absorber[J]. Chinese Journal of Lasers, 2018, 45(3): 301001
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