• Infrared Technology
  • Vol. 44, Issue 4, 343 (2022)
Zaibo LI1、2、*, Yunxue LI1、2, Xu MA1、2, Yafang TIAN3, and Yanli SHI1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    LI Zaibo, LI Yunxue, MA Xu, TIAN Yafang, SHI Yanli. Measurement and Suppression Method for Excess Noise in Avalanche Photodiodes[J]. Infrared Technology, 2022, 44(4): 343 Copy Citation Text show less
    References

    [1] Tosi A, Calandri N, Sanzaro M, et al. Low-noise, low-jitter, high detection efficiency InGaAs/InP single-photon avalanche diode[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 192-197.

    [2] Emmons R B. Avalanche photodiode frequency response[J]. Journal of Applied Physics, 1967, 38(9): 3705-3714.

    [3] Lau K S, Tan C H, Ng B K, et al. Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end[J]. Measurement Science and Technology, 2006, 17(7): 1941-1946.

    [4] Campbell J C, Chandrasekhar S, Tsang W T, et al. Multiplication noise of wide-bandwidth InP/InGaAsP/InGaAs avalanche photodiodes[J]. Journal of Lightwave Technology, 1989, 7(3):473-478.

    [8] Bulman G E, Robbins V M, Stillman G E. The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements[J]. IEEE Transactions on Electron Devices, 2005, 32(11): 2454-2466.

    [9] Anselm K A, Yuan P, Hu C, et al. Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions[J]. Applied Physics Letters, 1997, 71(26): 3883-3885.

    [10] LI K F, ONG D S, David J, et al. Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes[J]. IEEE Transactions on Electron Devices, 1998, 45(10): 2102-2107.

    [11] Green J E, David J P R, Tozer R C. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes[J]. Measurement Science & Technology, 2012, 23(12): 125901-125913.

    [12] LIANG Q, Dimler S D, Baharuddin N A P, et al. An excess noise measurement system for weak responsivity avalanche photodiodes[J]. Measurement Science and Technology, 2018, 29(6): 065015-065021.

    [13] LIANG Q, Cheong J S L, Ong J S, et al. Avalanche noise in Al0.52In0.48P diodes[J]. IEEE Photonics Technology Lett, 2016, 28(4): 481-484.

    [14] CHOU F P, Hsieh Y C, HUANG C A, et al. Excess noise of 850-nm silicon avalanche photodiodes fabricated using CMOS process[C]//2014 International Symposium on Next-Generation Electronics (ISNE) of IEEE, 2014, 978(1): 1-3.

    [15] Lee M J, Rcker H, Choi W Y. Optical-power dependence of gain, noise, and bandwidth characteristics for 850-nm CMOS silicon avalanche photodetectors[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(6): 211-217.

    [16] WEN K, TU J J, ZHAO Y L. A balanced optical system for excess noise factor measurement of avalanche photodiode[C]//Asia Communications and Photonics Conference, 2016: DOI: 10.1364/ACPC.2016.AF2A.67.

    [17] Webb R P, McIntyre R J, Conradi J, et al. Properties of avalanche photodiodes[J]. R. C. A. Review, 1974, 35(2): 234-278.

    [18] KANG Y, Zadka M, Litski S, et al. Epitaxially-grown Ge/Si avalanche photodiodes for 1.3 mm light detection[J]. Optics Express, 2008, 16(13): 9365-9371.

    [19] Min R, Maddox S J, Woodson M E, et al. AlInAsSb separate absorption, charge, and multiplication avalanche photodiodes[J]. Applied Physics Letters, 2016, 108(191108): 1-4.

    [20] Watanabe I, Torikai T, Makita K, et al. Impact Ionization Rates in (100) Al0.48In0.52As[J]. IEEE Electron Device Letters, 1990, 11(10): 437-438.

    [21] BAI X G, YUAN P, Mcdonald P, et al. Development of low excess noise SWIR APDs[C]// Infrared Technology & Applications XXXVIII, 2012, 8353: 83532H.

    [22] HU C, Anselm K A, Streetman B G, et al. Noise characteristics of thin multiplication region GaAs avalanche photodiodes[J]. Applied Physics Letters, 1996, 69(24): 3734-3736.

    [23] Ong D S, LI K F, Rees G J, et al. A simple model to determine multiplication and noise in avalanche photodiodes[J]. Journal of Applied Physics, 1998, 83(6): 3426-3428.

    [24] YUAN P, WANG S, SUN X, et al. Avalanche photodiodes with an impact-ionization-engineered multiplication region[J]. IEEE Photonics Technology Letters, 2000, 12(10): 1370-1372.

    [25] DUAN N, WANG S L, MA F, et al. High-speed and low-noise SACM avalanche photodiodes with an impact-ionization-engineered multiplication region[J]. IEEE Photonics Technology Letters, 2005, 17(8): 1719-1721.

    [26] Burris H R, Ferraro M S, Freeman W T, et al. Development of a large area InGaAs APD receiver based on an impact ionization engineered detector for free-space lasercomm applications[J]. Atmospheric Propagation IX, 2012, 10(12): 1370-1372.

    [27] Ferraro M S, Rabinovich W S, Mahon R, et al. Position Sensing and High Bandwidth Data Communication Using Impact Ionization Engineered APD Arrays[J]. IEEE Photonics Technology Letters, 2019, 31(1): 58-61.

    [28] SUN W L, ZHENG X G, LU Z W, et al. Numerical simulation of InAlAs/ InAlGaAs tandem avalanche photodiodes[C]// IEEE Photonic Society 24th Annual Meeting, 2011: DOI: 10.1109/PHO.2011.6110535.

    LI Zaibo, LI Yunxue, MA Xu, TIAN Yafang, SHI Yanli. Measurement and Suppression Method for Excess Noise in Avalanche Photodiodes[J]. Infrared Technology, 2022, 44(4): 343
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