Residual Stress and Thermal Stability of AlN Thin Films Deposited by Reactive Laser Ablation

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 27 >Issue 9 >Page 857 > Article

Chinese Journal of Lasers
Vol. 27, Issue 9, 857 (2000)

Residual Stress and Thermal Stability of AlN Thin Films Deposited by Reactive Laser Ablation

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Residual Stress and Thermal Stability of AlN Thin Films Deposited by Reactive Laser Ablation[J]. Chinese Journal of Lasers, 2000, 27(9): 857 Copy Citation Text

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References

[1] Leonard V. Interrante, Wei Lee. Preparation and properties of aluminum nitride films using an organometallic precursor. J. Electronchem. Soc., 1989, 136(2):472～478

[2] M. Penza, M. F. De Riccardis, L. Mirenghi et al.. Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films. Thin Solid Films, 1995, 259(2):154～162

[3] Ig-Hyeon Kim, Seon-Hyo Kim. Effect of N2+ ion bombardment on the compositional change and residual stress of AlN film synthesized by ion beam assisted deposition. J. Vac. Sci. Technol., 1995, A13(6):2814～2818

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