• Chinese Optics Letters
  • Vol. 7, Issue 8, 08741 (2009)
Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Yi Qu, and Baoxue Bo
Author Affiliations
  • National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China
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    DOI: 10.3788/COL20090708.0741 Cite this Article Set citation alerts
    Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Yi Qu, Baoxue Bo. Optical properties of 1.3-\mum InAs/GaAs quantum dots grown by metal organic chemical vapor deposition[J]. Chinese Optics Letters, 2009, 7(8): 08741 Copy Citation Text show less
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    CLP Journals

    [1] N. R., A. John, Chang Woo. Optical properties of excitons in strained Gax In1-xAs/GaAs quantum dot: ef fect of geometrical conf inement on exciton g-factor[J]. Chinese Optics Letters, 2013, 11(8): 082501

    Data from CrossRef

    [1] Zhiqiang Bian, Qi Wang, Zhigang Jia, Zhihong Pan, Xiaomin Ren, Shiwei Cai, Jun Wang, Yongqing Huang. Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer. Asia Communications and Photonics Conference 2013, AF1B.5(2013).

    [2] Huibo Yuan, Lin Li, Jing Zhang, Zaijin Li, Lina Zeng, Yong Wang, Yi Qu, Xiaohui Ma, Guojun Liu. Optical properties improvement of InGaAs/GaInP single quantum well grown by metal-organic chemical vapor deposition. Optik, 176, 295(2019).

    Lin Li, Guojun Liu, Zhanguo Li, Mei Li, Xiaohua Wang, Yi Qu, Baoxue Bo. Optical properties of 1.3-\mum InAs/GaAs quantum dots grown by metal organic chemical vapor deposition[J]. Chinese Optics Letters, 2009, 7(8): 08741
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