A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs

[in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 17 >Issue 12 >Page 717 > Article

Chinese Journal of Lasers
Vol. 17, Issue 12, 717 (1990)

A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs

[in Chinese] and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese]. A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs[J]. Chinese Journal of Lasers, 1990, 17(12): 717 Copy Citation Text

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Abstract

The theory and calculation results of the free electrons generated by picosecond light pulses at 1.064μm in semi-insulating GaAs are presented, and the variation of the spatial Fourier components of the free-electron density from deep levels and two-photon absorption versus the intensity of excitation pulses is discussed.

Keywords

free-electron density pa light pulses GaAs

[in Chinese], [in Chinese]. A study of free-electron density and its spatial Fourier component excited by picosecond light pulses in GaAs[J]. Chinese Journal of Lasers, 1990, 17(12): 717

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