• Frontiers of Optoelectronics
  • Vol. 7, Issue 1, 84 (2014)
Mohammad KARIMI1, Kambiz ABEDI2、*, and Mahdi ZAVVARI3
Author Affiliations
  • 1Department of Electrical Engineering, Mahabad Branch, Islamic Azad University, Mahabad, Iran
  • 2Department of Electrical Engineering, Faculty of Electrical and Computer Engineering, Shahid Beheshti University, Tehran 1983963113, Iran
  • 3Department of Electrical Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran
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    DOI: 10.1007/s12200-014-0361-2 Cite this Article
    Mohammad KARIMI, Kambiz ABEDI, Mahdi ZAVVARI. InAs/GaAs far infrared quantum ring inter-subband photodetector[J]. Frontiers of Optoelectronics, 2014, 7(1): 84 Copy Citation Text show less
    References

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    [2] Dai J H, Lee J H, Lin Y L, Lee S C. In(Ga)As quantum rings for terahertz detectors. Japanese Journal of Applied Physics, 2008, 47(4): 2924-2926

    [3] Ling H S, Wang S Y, Lee C P, Lo M C. Characteristics of In(Ga)As quantum ring infrared photodetectors. Journal of Applied Physics, 2009, 105(3): 034504-1-034504-4

    [4] Lee J H, Dai J H, Chan C F, Lee S C. In(Ga)As quantum ring terahertz photodetector with cutoff wavelength at 175 μm. Photonics Technology Letters, IEEE, 2009, 21(11): 721-723

    [5] Bhowmick S, Huang G, Guo W, Lee C S, Bhattacharya P, Ariyawansa G, Perera A G U. High-performance quantum ring detector for the 1-3 terahertz range. Applied Physics Letters, 2010, 96(23): 231103-1-231103-3

    [6] Huang G, Guo W, Bhattacharya P, Ariyawansa G, Perera A G U. A quantum ring terahertz detector with resonant tunnel barriers. Applied Physics Letters, 2009, 94(10): 101115-1-1101115-3

    [7] Li S S, Xia J B. Electronic states of InAs/GaAs quantum ring. Journal of Applied Physics, 2001, 89(6): 3434-3437

    [8] Chen J H, Liu J L. A numerical method for exact diagonalization of semiconductor quantum dot model. Computer Physics Communications, 2010, 181(5): 937-946

    [9] Kochman B, Stiff-Roberts A D, Chakrabarti S, Phillips J D, Krishna S, Singh J, Bhattacharya P. Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors. IEEE Journal of Quantum Electronics, 2003, 39(3): 459-467

    [10] Mir A, Ahmadi V. Design and analysis of a new structure of InAs/GaAs QDIP for 8-12 μm infrared windows with low dark current. Journal of Modern Optics, 2009, 56(15): 1704-1712

    [11] Su X H, Chakrabarti S, Bhattacharya P, Ariyawansa G, Perera A G U. A resonant tunneling quantum-dot infrared photodetector. IEEE Journal of Quantum Electronics, 2005, 41(7): 974-979

    [12] Towe E, Pan D. Semiconductor quantum-dot nanostructures: their application in a new class of infrared photodetectors. IEEE Journal of Selected Topics in Quantum Electronics, 2000, 6(3): 408-421

    [13] Zavvari M, Ahmadi V, Mir A, Darabi E. Quantum dot infrared photodetector enhanced by avalanche multiplication. Electronics Letters, 2012, 48(10): 589-591

    [14] Zavvari M, Ahmadi V. Dynamics of avalanche quantum dot infrared photodetectors. Modern Physics Letters B, 2012, 26(32): 1250216-1-1250216-10

    [15] Zavvari M, Ahmadi V. Quantum-dot-based id-IR single-photon detector with self-quenching and self-recovering operation. Electron Device Letters, IEEE, 2013, 34(6): 783-785

    Mohammad KARIMI, Kambiz ABEDI, Mahdi ZAVVARI. InAs/GaAs far infrared quantum ring inter-subband photodetector[J]. Frontiers of Optoelectronics, 2014, 7(1): 84
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