• Chinese Journal of Lasers
  • Vol. 35, Issue 6, 911 (2008)
Huang Xiaohui*, Chen Qiaoping, Xie Hongfang, and Xue Lan
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  • [in Chinese]
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    Huang Xiaohui, Chen Qiaoping, Xie Hongfang, Xue Lan. Growth and Thermal Properties of Er3+:Y0.5Gd0.5VO4 Laser Crystal[J]. Chinese Journal of Lasers, 2008, 35(6): 911 Copy Citation Text show less

    Abstract

    Er3+:Y0.5Gd0.5VO4 crystal has been grown by the Czochralski method. The effective separation coefficient of Er3+ in the crystal was 1.03 and the concentration of Er3+ ions in crystal is 0.83%, which was measured by the method of inductively coupled plasma (ICP) spectrum. The measured thermal expansion coefficients were αa=2.08×10- 6/℃, αc=8.87×10-6 /℃ from 30 ℃ to 1300 ℃ along its crystallographic a axis and c axis, respectively. The measured specific heat was 0.48 J/(g·K) at 25 ℃. The thermal diffusion coefficients of Er3+:Y0.5Gd0.5VO4 were measured by laser pulse method and the thermal conductivity was also calculated. The a axis and c axis thermal conductivity of Er3+:Y0.5Gd0.5VO4 was 6.1~4.9 W/(m·K), 7.7~6.2 W/(m·K) respectively in the temperature range from 25 ℃ to 200 ℃.
    Huang Xiaohui, Chen Qiaoping, Xie Hongfang, Xue Lan. Growth and Thermal Properties of Er3+:Y0.5Gd0.5VO4 Laser Crystal[J]. Chinese Journal of Lasers, 2008, 35(6): 911
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