• Optical Instruments
  • Vol. 42, Issue 2, 50 (2020)
Ying XU and Fuxing GU*
Author Affiliations
  • School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
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    DOI: 10.3969/j.issn.1005-5630.2020.02.009 Cite this Article
    Ying XU, Fuxing GU. Fabrication of monolayer gallium selenide crystal by moving the heating source[J]. Optical Instruments, 2020, 42(2): 50 Copy Citation Text show less
    Schematic chassis diagram of the movable tube furnace
    Fig. 1. Schematic chassis diagram of the movable tube furnace
    Schematic diagram of growing GaSe by a movable device, and the moving track of the furnace is ①→②→③
    Fig. 2. Schematic diagram of growing GaSe by a movable device, and the moving track of the furnace is ①→②→③
    Schematic diagram of growing GaSe by experiment 1 in the moving method
    Fig. 3. Schematic diagram of growing GaSe by experiment 1 in the moving method
    Schematic diagram of growing GaSe by the Experiment 2 in the moving method
    Fig. 4. Schematic diagram of growing GaSe by the Experiment 2 in the moving method
    Schematic diagram of growth GaSe by a traditional CVD method
    Fig. 5. Schematic diagram of growth GaSe by a traditional CVD method
    Schematic optical diagram of growing GaSe by traditional CVD method
    Fig. 6. Schematic optical diagram of growing GaSe by traditional CVD method
    Schematic diagram of changing growth time of GaSe
    Fig. 7. Schematic diagram of changing growth time of GaSe