• High Power Laser Science and Engineering
  • Vol. 12, Issue 4, 04000e42 (2024)
Jianmei Shi1,2, Chengao Yang1,2,*, Yihang Chen1,2, Tianfang Wang1,2..., Hongguang Yu1,2, Juntian Cao1,2, Zhengqi Geng1, Zhiyuan Wang1, Haoran Wen3, Hao Tan3,4, Yu Zhang1,2, Dongwei Jiang1,2, Donghai Wu1,2, Yingqiang Xu1,2, Haiqiao Ni1,2 and Zhichuan Niu1,2,*|Show fewer author(s)
Author Affiliations
  • 1Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, China
  • 3International Quantum Academy, Shenzhen, China
  • 4Hefei National Laboratory, Hefei, China
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    DOI: 10.1017/hpl.2024.23 Cite this Article Set citation alerts
    Jianmei Shi, Chengao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Hao Tan, Yu Zhang, Dongwei Jiang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu, "Precise mode control of mid-infrared high-power laser diodes using on-chip advanced sawtooth waveguide designs," High Power Laser Sci. Eng. 12, 04000e42 (2024) Copy Citation Text show less
    (a) Schematic diagram of the ASW lasers. (b) Scanning electron microscope image of the ASW lasers, top view (left) and enlarged view (right).
    Fig. 1. (a) Schematic diagram of the ASW lasers. (b) Scanning electron microscope image of the ASW lasers, top view (left) and enlarged view (right).
    Details of the ASW structure. The inset shows the near-field distribution of different order modes of conventional BA lasers.
    Fig. 2. Details of the ASW structure. The inset shows the near-field distribution of different order modes of conventional BA lasers.
    The optical field distributions of lateral modes with order numbers m = 0, 1, 2, 3, 6 and 8 through the ASW lasers, respectively.
    Fig. 3. The optical field distributions of lateral modes with order numbers m = 0, 1, 2, 3, 6 and 8 through the ASW lasers, respectively.
    (a) Energy retained after transmitting different lateral modes through the ASW structure with microstructure size ratios of 0.4, 0.5 and 0.6. (b)–(f) Simulated optical field distribution of modes with order numbers m = 0, 1, 3, 6 and 8 at the facet of conventional BA lasers and ASW lasers with the microstructure size ratio of 0.5.
    Fig. 4. (a) Energy retained after transmitting different lateral modes through the ASW structure with microstructure size ratios of 0.4, 0.5 and 0.6. (b)–(f) Simulated optical field distribution of modes with order numbers m = 0, 1, 3, 6 and 8 at the facet of conventional BA lasers and ASW lasers with the microstructure size ratio of 0.5.
    (a) L–I curves and (b) PCE–I curves of conventional BA lasers and ASW lasers with different positions and periods. The inset displays the spectra at 4.5 A of the BA laser and the ASW laser, respectively.
    Fig. 5. (a) L–I curves and (b) PCE–I curves of conventional BA lasers and ASW lasers with different positions and periods. The inset displays the spectra at 4.5 A of the BA laser and the ASW laser, respectively.
    The lateral far-field profiles at (a) 1 A and (b) 4.5 A of conventional BA lasers and ASW lasers, respectively. (c) The lateral far-field angles depending on the injection current at 288 K of conventional BA lasers and ASW lasers.
    Fig. 6. The lateral far-field profiles at (a) 1 A and (b) 4.5 A of conventional BA lasers and ASW lasers, respectively. (c) The lateral far-field angles depending on the injection current at 288 K of conventional BA lasers and ASW lasers.
    Jianmei Shi, Chengao Yang, Yihang Chen, Tianfang Wang, Hongguang Yu, Juntian Cao, Zhengqi Geng, Zhiyuan Wang, Haoran Wen, Hao Tan, Yu Zhang, Dongwei Jiang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu, "Precise mode control of mid-infrared high-power laser diodes using on-chip advanced sawtooth waveguide designs," High Power Laser Sci. Eng. 12, 04000e42 (2024)
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