[1] H. Lischka, H. Henschel, W. Lennartz et al.. Radiation sensitivity of light emitting diodes (LED), laser diodes (LD) and photodiodes (PD)[J]. IEEE Trans. Nucl. Sci., 1992, 33: 423～427

[2] A. Jolly, J. Vicrey. Modelling threshold shift of power laser diodes under neutronic and photonic irradiation[J]. IEEE Trans. Nucl. Sci., 1994, 41(6): 503～509

[3] J. C. Camparo, S. B. Delcamp, R. P. Frueholz. AlGaAs diode laser blue shift resulting from fast neutron irradiation[J]. J. Appl. Phys., 1992, 71: 5323～5331

[4] H. Ohyama, E. Simoen, C. Claey et al.. Impact of neutron irradiation on optical performance of InGaAsP laser diodes[J]. Thin Solid Films, 2000, 364: 259～263

[5] J. Beringer, K. Borer, R. K. Monnsen et al.. Radiation harness and lifetime studies of LEDs and VCSELs for the optical readout of the ATLAS SCT[J]. Nucl. Instr. and Methods in Physics Research, 1999, 435: 375～392

[6] Yang Shengsheng, Zhang Ying, Gu Kewei et al.. Development of investigations on the total dose effect of devices in fiber optical communications system[J]. Vacuum & Cryogenics, 2002, 8(4): 197～200

[7] Lin Libin, Liao Zhijun, Zhu Xiaotia et al.. Effect of electron radiation in 1.3 μm InGaAsP semicouductor laser[J]. Chin. J. Lasers, 2001, A28(6): 497～500

[8] Wang Guizhen, Jiang Jinghe, Zhang Zhengxuan et al.. Radiation sources and dosimetry in the test of total dose effect[J]. Microelectronics, 2001, 31(3): 168～172

[9] Wang Tongquan, Shen Yongping, Wang Shangwu et al.. Radiation effects in the space radiation environment[J]. J. National University of Defense Technology, 1999, 21(4): 36～39

[10] Chen Jianguo, Li Yan, Lu Yang et al.. Study of bistable characteristics of long external cavity semiconductor lasers using expression of threshold carrier density[J]. Acta Optica Sinica, 2000, 20(8): 1015～1020

[11] A. H. Johnston, T. F. Miyahira, B. G. Rax. Proton damage in advanced laser diodes[J]. IEEE Trans. Nucl. Sci., 2001, 148(12): 1746～1772