Effect of grain size on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films prepared by rf-magnetron sputtering

Shuai Ma; Wei Li; Jigong Hao; Yuying Chen; Zhijun Xu

doi:10.1142/S2010135X23500170

Journals >Journal of Advanced Dielectrics >Volume 13 >Issue 5 >Page 2350017 > Article

Journal of Advanced Dielectrics
Vol. 13, Issue 5, 2350017 (2023)

Effect of grain size on ferroelectric and dielectric properties of

{Bi}_{3.25}

{La}_{0.75}

{Ti}_{3}

O_{12}

thin films prepared by rf-magnetron sputtering

Shuai Ma^1、2、*, Wei Li³, Jigong Hao³, Yuying Chen¹, and Zhijun Xu⁴

Author Affiliations

¹School of Medicine, Liaocheng University, Liaocheng 252059, P. R. China

²Beijing Key Laboratory of Digital Stomatology, Beijing 100081, P. R. China

³School of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, P. R. China

⁴School of Environment and Materials Engineering, Yantai University, Yantai 264005, P. R. China

show less

DOI: 10.1142/S2010135X23500170 Cite this Article

Shuai Ma, Wei Li, Jigong Hao, Yuying Chen, Zhijun Xu. Effect of grain size on ferroelectric and dielectric properties of

{Bi}_{3.25}

{La}_{0.75}

{Ti}_{3}

O_{12}

thin films prepared by rf-magnetron sputtering[J]. Journal of Advanced Dielectrics, 2023, 13(5): 2350017 Copy Citation Text

show less

Abstract

{Bi}_{3.25}

{La}_{0.75}

Ti₃

O_{12}

(BLT) thin films are promising materials used in non-volatile memories. In this work, BLT films were deposited on Pt(111)/Ti/SiO₂/Si substrates by rf-magnetron sputtering method followed by annealing treatments. The microstructures of BLT thin films were investigated via X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). With the increase in annealing temperature, the grain size increased significantly and the preferred crystalline orientation changed. A well-saturated hysteresis loop with a superior remnant polarization of 15.4