Simultaneous Measurement of Profiles of the Stable-state Photoconductive Response and Minority Carrier Lifetime Using Two Semicondutor Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 22 >Issue 10 >Page 757 > Article

Chinese Journal of Lasers
Vol. 22, Issue 10, 757 (1995)

Simultaneous Measurement of Profiles of the Stable-state Photoconductive Response and Minority Carrier Lifetime Using Two Semicondutor Lasers

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simultaneous Measurement of Profiles of the Stable-state Photoconductive Response and Minority Carrier Lifetime Using Two Semicondutor Lasers[J]. Chinese Journal of Lasers, 1995, 22(10): 757 Copy Citation Text

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Abstract

This paper presents an infrared optical system.Two infrared optical beams, oneof which is from a tunable Pb1-xSnxTe diode laser,and the other from a pulsed GaAs/GaAlAs diode laser,were focused at the same spot of a sample.The dimension of theinfrared spot was measured to be about 250 μm in diameter.The profiles of the stable-antephotoconductive response and the minority carrier lifetime of a narrow band Hg1-xCdxTe were studied.

Keywords

HgCdTe mercury cadmium telluride minority carrier lifetime photoconductive response semiconductor laser

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