• Frontiers of Optoelectronics
  • Vol. 10, Issue 2, 111 (2017)
Shoujun DING1、2, Qingli ZHANG1、*, Wenpeng LIU1, Jianqiao LUO1, and Dunlu SUN1
Author Affiliations
  • 1Anhui Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Hefei 230031, China
  • 2University of Science and Technology of China, Hefei 230026, China
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    DOI: 10.1007/s12200-017-0715-7 Cite this Article
    Shoujun DING, Qingli ZHANG, Wenpeng LIU, Jianqiao LUO, Dunlu SUN. Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4[J]. Frontiers of Optoelectronics, 2017, 10(2): 111 Copy Citation Text show less

    Abstract

    A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with phosphoric acid etchant. Mechanical properties (such as hardness, yield strength, fracture toughness, and brittle index) of the as-grown crystal were systematically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd: GdNbO4 was measured in the wavelength range of 320-2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd:GdNbO4.
    Shoujun DING, Qingli ZHANG, Wenpeng LIU, Jianqiao LUO, Dunlu SUN. Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4[J]. Frontiers of Optoelectronics, 2017, 10(2): 111
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