As a method of micro fabrication, laser induced forward transfer (LIFT) technology can be used to make microstructures. Presently, the fabrication process has become a popular issue in the field of micro-machining. A Cu thin film is transferred from one quartz substrate to another quartz substrate by regulating the pulse power density of Gaussian distributed laser beam. The transferred Cu thin film is characterized by optical microscopy, scanning electron microscopy (SEM), and X-ray photoelectron microscopy (XPS) analysis. The relationship between pulse power density of laser beam and size, special morphology and uniformity of transferred Cu film is discussed, and the oxidation condition of the transferred Cu film is also studied. Moreover, the mechanism of the transferred process is analyzed based on the results. It is found that the Cu film transfer process can be realized when the average pulse power density of laser beam reaches 1×105 W/cm2. With the increase of pulse power density of laser beam, the size of transferred Cu film is also enlarged, and reaches a certain value at last with the morphology transforming from plane to crater-shape. Almost no oxidation phenomenon is observed on the Cu when transferred Cu film is sputtered off 10 nm in thickness. The transferred film adheres well to the target substrate, and no obvious diffusion phenomenon is observed between Cu film and the target quartz substrate.