Study on Performance of InSb Wafer Based on High-temperature Heat Treatment

Wei BAI; Li-chao ZhANG; Qiang-qiang XU; Chao ZHAO; Ming LIU

doi:10.3969/j.issn.1672-8785.2021.04.002

Journals >INFRARED >Volume 42 >Issue 4 >Page 9 > Article

INFRARED
Vol. 42, Issue 4, 9 (2021)

Study on Performance of InSb Wafer Based on High-temperature Heat Treatment

Wei BAI^*, Li-chao ZhANG, Qiang-qiang XU, Chao ZHAO, and Ming LIU

Author Affiliations

[in Chinese]

show less

DOI: 10.3969/j.issn.1672-8785.2021.04.002 Cite this Article

BAI Wei, ZhANG Li-chao, XU Qiang-qiang, ZHAO Chao, LIU Ming. Study on Performance of InSb Wafer Based on High-temperature Heat Treatment[J]. INFRARED, 2021, 42(4): 9 Copy Citation Text

show less

References

[1] Hamidreza S. Optimisation of Cooled InSb Detectors[J]. III-Vs Review, 2004, 17(7): 2731.

[6] Lucy Z, Meimei T, Leslie A. Developing High-performance IIIV Superlattice IRFPAs for Defense-challenges and Solutions[C]. SPIE, 2010, 7660: 76601E.

BAI Wei, ZhANG Li-chao, XU Qiang-qiang, ZHAO Chao, LIU Ming. Study on Performance of InSb Wafer Based on High-temperature Heat Treatment[J]. INFRARED, 2021, 42(4): 9

Download Citation

Tools

Save the article for my favorites

Paper Information