Fig. 1. Schematic bipolar device models constructed with the SGDY (above panel) or NGDY (below panel) as center scattering region and the graphene nanoribbons as semi-infinite electrodes (source and drain in pink areas). The apex and edge carbon atoms are passivated by hydrogen atoms, and black frames indicate periodic unit cells.SGDY (上图)和NGDY (下图)纳米带两端连接石墨烯纳米带半无限电极(源极和漏极粉色区域)构建的双极器件模型, 石墨炔尖端和石墨烯边缘碳原子由氢原子钝化, 黑色框架表示周期性单胞

Fig. 2. Electronic energy band structure of SGDY (a) and NGDY (b) nanoribbons with Fermi energy level as reference energy zero (horizontal dashed line).SGDY (a)和NGDY (b)纳米带的电子能带结构, 以费米能级(水平虚线)为能量参考零点

Fig. 3. Electron transport calculation in transistor model of bipolar devices with the SGDY/graphene nanoribbons heterostructure as the center scattering region and semi-infinite electrodes (source and drain) respectively under the gate voltage in vertical direction. The pink areas indicate electrodes, and the gray, white, red, yellow and pink spheres represent carbon, hydrogen, oxygen, silicon and aluminium atoms respectively.在SGDY/石墨烯异质结纳米带双极器件的垂直方向施加栅极电压构建的晶体管电子输运计算模型, 粉色区域表示电极, 灰色、白色、红色、黄色和粉色小球分别代表碳、氢、氧、硅和铝原子

Fig. 4. Drain current of SGDY and NGDY nanoribbon transistors varying with bias voltage under (a) U_g = 0 V and (b) U_g = 4 V SGDY和NGDY纳米带晶体管的漏极电流随偏置电压的变化　(a) U_g = 0 V; (b) U_g = 4 V

Fig. 5. Electron transmission spectra of SGDY nanoribbon transistors in the bias voltage range of 0−1.0 V under gate voltageU_g = 4 V. SGDY纳米带晶体管在偏置电压0—1.0 V范围内的电子透射谱(栅极电压U_g = 4 V)

Table 1. Scheme and parameter setting up in calculationswith Dmol3 program.

Table 2. PVR for nanoribbon transistors fabricated with different materials under different gate voltage.