• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 9, 915 (2022)
YANG Zhikang1、2、*, WEN Lin1, ZHOU Dong1, LI Yudong1, FENG Jie1, and GUO Qi1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.11805/tkyda2022009 Cite this Article
    YANG Zhikang, WEN Lin, ZHOU Dong, LI Yudong, FENG Jie, GUO Qi. Damage mechanism of γ-ray and proton radiation effects of CCD under different bias conditions[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 915 Copy Citation Text show less
    References

    [1] HUANG Z F,WANG H Y,HAN J T. Quick method of removing smear in astronomical Full-Frame CCD image[J]. Signal Processing, 2010(26):607-611.

    [2] WOLFE M A,GOUDFROOIJ P,BOHLIN R C,et al. Status and performance of the STIS CCD after HST servicing Mission 4 repair[R]. America,Space Telescope Science Institute, 2013. https://www.stsci.edu/hst/instrumentation/stis.

    [3] HOLLAND S E,BEBEK C J,DANIELS P J,et al. Technology development for 4 k×4 k,back-illuminated,fully depleted scientific CCD imagers[C]// IEEE Nuclear Science Symposium Conference Record. [S.l]:IEEE, 2007:2220-2225.

    [4] PAGANI C. Study of the radiation effects on the Swift-XRT CCD camera in low Earth orbit[D]. British:University of Leicester, 2015.

    [5] TERRAZAS J C,CORCIONE L,LATTANZI M G,et al. Radiation damage effects in space.borne CCD detectors operated in TDI mode[J]. Publications of the Astronomical Society of the Pacific, 2017,129(977):075002.

    [6] KILLIANY J M. Radiation effects on silicon charge-coupled devices[J]. IEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1978,1(4):353-365.

    [7] LARSEN K P,CLARY M C,JANESICK J R. Charge-coupled device television camera for NASA's Galileo mission to Jupiter[J]. Optical Engineering, 1984,23(3):334-342.

    [8] RAUGER J T. Sensors for the hubble space telescope wide-field and planetary cameras(1 and 2)[C]// CCDs in Astronomy. San Francisco,CA:[s.n.], 1990:217-230.

    [9] ROUR J R,SHANFIELD Z,HARTMANN R A, et al. Permanent damage introduced by single particles incident on silicon devices[J]. IEEE Transactions on Nuclear Science, 1983,30(6):4526-4532.

    [10] JANESICK J, ELLIOTT T, POOL F. Radiation damage in scientific charge-coupled devices[J]. IEEE Transactions on Nuclear Science, 1989,36(1):572-578.

    [11] SROUR J R, HARTMANN R A, KITAZAKI K S. Permanent damage produced by single proton interactions in silicon devices[J]. IEEE Transactions on Nuclear Science, 1986,33(6):1597-1604.

    [14] KILLIANY J M, BAKER W D, SAKS N S, et al. Effects of ionizing radiation on charge-coupled device structures[J]. IEEE Transactions on Nuclear Science, 1974,21(6):193-200.

    [15] LI Yudong,LIU Bingkai,WEN Lin,et al. Role of the oxide trapped charges in charge-coupled device ionizing radiation-induced dark signal[J]. Radiation Physics and Chemistry, 2021(189):1-5.

    [16] OLDHAM T R,LELIS A J,MCLEAN F B. Spatial dependence of trapped holes determined from tunneling analysis and measured annealing[J]. IEEE Transactions on Nuclear Science, 2007,33(6):1203-1209.

    [17] MCWHORTER P J,MILLER S L,MILLER W M. Modeling the anneal of radiation-induced trapped holes in a varying thermal environment[J]. IEEE Transactions on Nuclear Science, 1990,37(6):1682-1689.

    [18] SHANEYFELT M R, SCHWANK J R, FLEETWOOD D M, et al. Annealing behavior of linear bipolar devices with enhanced low.dose.rate sensitivity[J]. IEEE Transactions on Nuclear Science, 2004,51(6):3172-3177.

    [19] RASHKEEV S N,FLEETWOOD D M,SCHRIMPF R D,et al. Effects of hydrogen motion on interface trap formation and annealing[J]. IEEE Transactions on Nuclear Science, 2004,51(6):3158-3165.

    [20] SAKS N S,KLEIN R B,GRISCOM D L. Formation of interface traps in MOSFETs during annealing following low-temperature irradiation[J]. IEEE Transactions on Nuclear Science, 1988,35(6):1234-1240.

    [21] HOPKINSON G R. Radiation-induced dark current increases in CCDs[C]// Radiation and Its Effects on Components and Systems. Saint Malo,France:IEEE, 1993:401-408.

    YANG Zhikang, WEN Lin, ZHOU Dong, LI Yudong, FENG Jie, GUO Qi. Damage mechanism of γ-ray and proton radiation effects of CCD under different bias conditions[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 915
    Download Citation