• Journal of Terahertz Science and Electronic Information Technology
  • Vol. 20, Issue 9, 884 (2022)
ZHANG Hong1、*, GUO Hongxia2, GU Zhaoqiao1, LIU Yitian1, ZHANG Fengqi2, PAN Xiaoyu2, JUAnan1, LIU Ye1, and FENG Yahui1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.11805/tkyda2021444 Cite this Article
    ZHANG Hong, GUO Hongxia, GU Zhaoqiao, LIU Yitian, ZHANG Fengqi, PAN Xiaoyu, JUAnan, LIU Ye, FENG Yahui. Radiation effects of SiC JBS diodes and SiC MOSFETs[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 884 Copy Citation Text show less
    References

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    ZHANG Hong, GUO Hongxia, GU Zhaoqiao, LIU Yitian, ZHANG Fengqi, PAN Xiaoyu, JUAnan, LIU Ye, FENG Yahui. Radiation effects of SiC JBS diodes and SiC MOSFETs[J]. Journal of Terahertz Science and Electronic Information Technology , 2022, 20(9): 884
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