• Chinese Journal of Lasers
  • Vol. 31, Issue 3, 262 (2004)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Performance of Xenon-Lamp Pumped Nd:GdVO4 Pulse Laser[J]. Chinese Journal of Lasers, 2004, 31(3): 262 Copy Citation Text show less

    Abstract

    Pulse laser performance of Nd∶GdVO 4 crystal is investigated by using xenon-flash lamp as pump source. The dimension of the laser crystal sample is 4 mm×4 mm×6 mm. With output coupler transmission of T=15%, static output energy of 31.7 mJ is obtained at the pump energy of 6.32 J. For T=7% output coupler, the pump threshold of the laser is 0.13 J. The passively Q-switched operation is achieved by using 1.5 mm thickness Cr 4+∶YAG wafer with small-signal transmission of 54.7%. The dynamic-static laser output ratio is about 1:3. With T=15% output coupler, single laser pulses with duration of 48.0 ns and 39.2 ns are acquired at the pump energy of 3.89 J and 6.32 J, respectively.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Performance of Xenon-Lamp Pumped Nd:GdVO4 Pulse Laser[J]. Chinese Journal of Lasers, 2004, 31(3): 262
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