Bi3.45Eu0.55Ti3O12 (BEuT) thin films were prepared on quartz substrates by using chemical solution deposition technique, and the structural and optical properties of thin films were studied in this work. XRD results show that BEuT thin films exhibit a polycrystalline bismuth-layered perovskite structure, and the average grain sizes increase with increasing annealing temperature. In the wavelength of above 500 nm, BEuT thin films show high optical transmittance, and the band gaps of all samples are nearly about 3.61 eV. The emission spectra of Eu3+ ions indicate that the photoluminescence of BEuT thin films is related to the annealing temperature of samples. The emission intensity firstly increases, reaches a maximum for the sample annealed at 700 ℃, and then decreases, which is related to thecrystallization of BEuT thin films.