• Chinese Optics Letters
  • Vol. 9, Issue 4, 041601 (2011)
Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Yongqing Huang, Qi Wang, Xia Zhang, and Wei Wang
Author Affiliations
  • Key Laboratory of Information Photonics and Optical Communications, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China
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    DOI: 10.3788/COL201109.041601 Cite this Article Set citation alerts
    Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Yongqing Huang, Qi Wang, Xia Zhang, Wei Wang. Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth[J]. Chinese Optics Letters, 2011, 9(4): 041601 Copy Citation Text show less
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    Data from CrossRef

    [1] Yan Liu, Yan Peng, Jingwei Guo, Dongsheng La, Zhaopeng Xu. The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD. AIP Advances, 8, 055108(2018).

    [2] Guro K. Svendsen, Johannes Skaar, Helge Weman, Marc-André Dupertuis. Symmetries and optical transitions of hexagonal quantum dots in GaAs/AlGaAs nanowires. Physical Review B, 92, 205303(2015).

    [3] Vladimir G. Dubrovskii, Frank Glas. Fundamental Properties of Semiconductor Nanowires, 3(2021).

    Jingwei Guo, Hui Huang, Xiaomin Ren, Xin Yan, Shiwei Cai, Yongqing Huang, Qi Wang, Xia Zhang, Wei Wang. Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth[J]. Chinese Optics Letters, 2011, 9(4): 041601
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