THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 31 >Issue 2 >Page 205 > Article

Acta Photonica Sinica
Vol. 31, Issue 2, 205 (2002)

THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE FORMATION OF STRAINED STATES OF AlGaAs/GaAs EPITAXIAL LAYERS OF TRANSPARENT GaAs PHOTOCATHODE DURING ITS MOCVD PROGRESS[J]. Acta Photonica Sinica, 2002, 31(2): 205 Copy Citation Text

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References

[1] Bartels W J,Nijman W J.X-ray double crystal diffractometry of Ga1-xAlxAs epitaxial layers.J Crystal Growth,1978,44(25):518～519

[2] Coltrin M E,Creighton J R,Hou H Q,et al.Organometallic vapor phase epitaxy (OMVPE).Materials Science and Engineering,1999,24(6):241～274

[3] Coltrin M E,Creighton J R,Hou H Q,et al.Organometallic vapor phase epitaxy(OMVPE).Materials Science and Engineering,1999,24(6):246～249

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