• Chinese Journal of Lasers
  • Vol. 46, Issue 5, 0503001 (2019)
Shuai Yuan1、2, Ruixin Dong1、2、*, Ruxin Liu1、2, and Xunling Yan1、2
Author Affiliations
  • 1School of Physics Science and Information Technology, Liaocheng University, Liaocheng, Shandong 252059, China
  • 2Shandong Key Laboratory of Optical Communication Science and Technology, Liaocheng, Shandong 252059, China
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    DOI: 10.3788/CJL201946.0503001 Cite this Article Set citation alerts
    Shuai Yuan, Ruixin Dong, Ruxin Liu, Xunling Yan. Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor[J]. Chinese Journal of Lasers, 2019, 46(5): 0503001 Copy Citation Text show less
    Schematic of molecular structure of polymer IPDT and ultraviolet-visible absorption spectrum of polymer IPDT film. (a) Schematic of molecular structure; (b) ultraviolet-visible absorption spectrum
    Fig. 1. Schematic of molecular structure of polymer IPDT and ultraviolet-visible absorption spectrum of polymer IPDT film. (a) Schematic of molecular structure; (b) ultraviolet-visible absorption spectrum
    Structural diagram of polymer memristor. (a) Structural diagram of Al/IPDT/ITO device; (b) SEM image of cross-section of device; (c) AFM image of polymer IPDT film
    Fig. 2. Structural diagram of polymer memristor. (a) Structural diagram of Al/IPDT/ITO device; (b) SEM image of cross-section of device; (c) AFM image of polymer IPDT film
    Device performances. (a) I-V curve of Al/IPDT/ITO memristor, and inset indicating I-V curve of device from -3 V to 3 V; (b) stability test results of device
    Fig. 3. Device performances. (a) I-V curve of Al/IPDT/ITO memristor, and inset indicating I-V curve of device from -3 V to 3 V; (b) stability test results of device
    I-V curves of device after 632 nm laser irradiation for different time. (a) 20 s; (b) 60 s
    Fig. 4. I-V curves of device after 632 nm laser irradiation for different time. (a) 20 s; (b) 60 s
    Stability test results of device. (a) After 632 nm laser irradiation for 60 s; (b) resistance changes of HRS and LRS in test for first 50 cycles
    Fig. 5. Stability test results of device. (a) After 632 nm laser irradiation for 60 s; (b) resistance changes of HRS and LRS in test for first 50 cycles
    I-V curves of device after modulation by laser with different wavelengths. (a) 405 nm; (b) 514 nm
    Fig. 6. I-V curves of device after modulation by laser with different wavelengths. (a) 405 nm; (b) 514 nm
    AFM images of polymer IPDT in tunneling mode. (a) Without laser; (b) after 632 nm laser irradiation for 1 min
    Fig. 7. AFM images of polymer IPDT in tunneling mode. (a) Without laser; (b) after 632 nm laser irradiation for 1 min
    Irradiation time /sON/OFFvoltage /VMax ON/OFF ratio(read on 1 V)Stability testResistance variation trend
    08/-7.51002000High→low→low→high(bipolar)
    203/-320-High→low→high→low(unbipolar)
    60-2.2/1.31043500Low→high→high→low(bipolar)
    Table 1. Performance change of device after 632 nm laser irradiation
    Wavelength /nmON/OFFvoltage /VLaser irradiationtime /min
    Without laser8/-7.5-
    405-1.7/0.8785
    514-1.5/1.2290
    632-2.2/1.31
    Table 2. Change of ON/OFF voltages of device after laser irradiation under different wavelengths
    Shuai Yuan, Ruixin Dong, Ruxin Liu, Xunling Yan. Effect of Laser Irradiation on Performances of Donor-Acceptor-Type Copolymer Memristor[J]. Chinese Journal of Lasers, 2019, 46(5): 0503001
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