[1] B. Hoex, A. J. M. van Erven, R. C. M. Bosch, W. T. M. Stals, M. D. Bijker, P. J. van den Oever, W. M. M. Kessels and M. C. M. van de Sanden, Progress in Photovoltaics: Research and Applications 13, 705 (2005).
[2] Wang S., Lennon A., Tjahjono B., Mai L., Vogl B. and Wenham S., Solar Energy Materials and Solar Cells 99, 226 (2012).
[3] GAO Hong-sheng, WANG Zhen-zhen, XIE Yi-yang, GENG Zhao-xin, KAN Qiang, WANG Chun-xia, YUAN Jun and CHEN Hong-da, Journal of Optoelectronics · Laser 25, 1338 (2014). (in Chinese)
[4] Wan Y., McIntosh K. R. and Thomson A.F., AIP Advances 3, 032113 (2013).
[5] Wei J., Ong P. L., Tay F. E. H. and Iliescu C., Thin Solid Films 516, 5181 (2008).
[6] Semenova O., Kozelskaya A., Zhi-Yong Li and Yu-De Yu, Chinese Physics B 24, 06801 (2015).
[7] J. Yang, R. C. de Guzman, S. O. Salley, K. Y. S. Ng, B.-H. Chen and M. M.-C. Cheng, Journal of Power Sources 269, 520 (2014).
[8] XIONG Xu-xu, JIANG Li-hua, ZENG Xiang-bin and ZHANG Xiao, Optoelectronics Letters 9, 375 (2013).
[9] Lee S.-E. and Park Y.-C., Journal of Luminescence 161, 154 (2015).
[10] Dergez D., Schalko J., Bittner A. and Schmid U., Applied Surface Science 284, 348 (2013).
[11] Jiang H., Cao G., Xu C. and Zhang Z., Effects of Residual Stress in the Membrane on the Performance of Surface Micromachining Silicon Nitride Pressure Sensor, 15th International Conference on Electronic Packaging Technology, 664 (2014).
[12] Qin C. and Yin H., ECS Transactions 44, 411 (2012).
[13] Karouta F., Vora K., Tian J. and Jagadish C., Journal of Physics D: Applied Physics 45, 445301 (2012).
[14] Iliescu C., Wei J. S., Ong P. L. and Chen B. T., Low Stress PECVD SiNx Process for Biomedical Application, CAS 2007 International Semiconductor Conference 1, 139 (2007).
[16] Sah R. E., Baumann H., Driad R. and Wagner J., Journal of The Electrochemical Society 157, G33 (2010).
[17] Tarraf A., Daleiden J., Irmer S., Prasai D. and Hillmer H., Journal of Micromechanics and Microengineering 14, 317 (2004).
[18] Wang Y., Lee J., Thakur B. and Huang J., Dual Frequency Silicon Nitride Film of Low Thermal Budget for Pre- Metal Dielectric Applications in Sub-0.25 μm Devices, IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop, 405 (1999).